Preparation of phosphorus-doped Si0.8Ge0.2 thermoelectric thin film using RF sputtering with induction coil

Journal of the Ceramic Society of Japan

Volumn 113, Issue 1320, 2005, Pages 558-561

  Tajima, Kazuki ^a   Shin, Woosuck ^a   Murayama, Norimitsu ^a   Itoh, Toshio ^a   Izu, Noriya ^a   Matsubara, Ichiro ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

Crystallinity; Induction coil; Radio frequency sputtering; SiGe; Thermoelectric property; Thin film

Indexed keywords

AMORPHOUS FILMS; ANNEALING; CARRIER CONCENTRATION; CARRIER MOBILITY; CRYSTALLIZATION; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; SILICON COMPOUNDS; SPUTTERING; THERMOELECTRICITY;

CRYSTALLINITY; INDUCTION COILS; RADIO-FREQUENCY (RF) SPUTTERING; THERMAL ANNEALING; THERMOELECTRIC PROPERTIES;

THIN FILMS;

EID: 24944441705     PISSN: 09145400     EISSN: None     Source Type: Journal    
DOI: 10.2109/jcersj.113.558     Document Type: Article

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