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Volumn E91-C, Issue 5, 2008, Pages 693-698

Design and fabrication of planar GaAs gunn diodes

Author keywords

GaAs; Graded gap injector negative resistance; Gunn diode

Indexed keywords

ANODES; CATHODES; DIODES; ELECTRODES; FABRICATION; FLIP CHIP DEVICES; GALLIUM ARSENIDE; HETEROJUNCTION BIPOLAR TRANSISTORS; METALLIZING; NEGATIVE RESISTANCE; OHMIC CONTACTS; OSCILLATORS (ELECTRONIC); SEMICONDUCTING GALLIUM; THRESHOLD VOLTAGE;

EID: 69649102743     PISSN: 09168524     EISSN: 17451353     Source Type: Journal    
DOI: 10.1093/ietele/e91-c.5.693     Document Type: Article
Times cited : (7)

References (12)
  • 2
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    • High-performance second-harmonic operation W-band GaAs Gunn diodes
    • S.J.J. Teng and R.E. Goidwasser, "High-performance second- harmonic operation W-band GaAs Gunn diodes," IEEE Electron Device Lett., vol.10, no.9, pp.412-414, 1989.
    • (1989) IEEE Electron Device Lett. , vol.10 , Issue.9 , pp. 412-414
    • Teng, S.J.J.1    Goidwasser, R.E.2
  • 5
    • 0033363187 scopus 로고    scopus 로고
    • V-band planar Gunn oscillators and VCOs on A1N substrates using flip-chip bonding technology
    • W. Watanabe, T. Deguchi, and A. Nakagawa, "V-band planar Gunn oscillators and VCOs on A1N substrates using flip-chip bonding technology," IEEE MTT-S Digest. pp.13 16, 1999.
    • (1999) IEEE MTT-S Digest. , pp. 13-16
    • Watanabe, W.1    Deguchi, T.2    Nakagawa, A.3
  • 6
    • 0033724445 scopus 로고    scopus 로고
    • 77 GHz planar Gunn VCOs on A1N substrates using novel flip-chip InP Gunn diodes
    • A. Nakagawa, K. Watanabe, T. Yoshida, T. Deguchi, and Y. Old, "77 GHz planar Gunn VCOs on A1N substrates using novel flip-chip InP Gunn diodes," IEEE MTf-S Digest, pp.1205-1208, 2000.
    • (2000) IEEE MTf-S Digest , pp. 1205-1208
    • Nakagawa, A.1    Watanabe, K.2    Yoshida, T.3    Deguchi, T.4    Old, Y.5
  • 7
    • 0023982805 scopus 로고
    • The use of linearly graded composition AIGaAs injectors for intervalley transfer in GaAs: Theory and experiment
    • N.R. Couch, P.H. Beton, M.J. Kelly, D.J. Knight, and 3. Ondria, "The use of linearly graded composition AIGaAs injectors for intervalley transfer in GaAs: Theory and experiment" Solid-State Electron., vol.31, no.3-4, pp.613-616, 1988.
    • (1988) Solid-State Electron. , vol.31 , Issue.3-4 , pp. 613-616
    • Couch, N.R.1    Beton, P.H.2    Kelly, M.J.3    Knight, D.J.4    Ondria, J.5
  • 8
    • 0024882440 scopus 로고
    • Hot electron injection in millimetre wave Gunn diodes
    • N.R. Couch, M.J. Kelly, H. Spooner, and T.M. Kerr, "Hot electron injection in millimeter wave Gunn diodes," Solid-State Electron., vol.32, no.12, pp.1685-1688, 1989. (Pubitemid 20652103)
    • (1989) Solid-State Electronics , vol.32 , Issue.12 , pp. 1685-1688
    • Couch, N.R.1    Kelly, M.J.2    Spooner, H.3    Kerr, T.M.4
  • 9
    • 9544243709 scopus 로고    scopus 로고
    • High frequency investigation of graded gap injectors for GaAs Gunn diodes
    • S. Montanan, A. Forster, Ml. Lepsa, and H. Luth, "High frequency investigation of graded gap injectors for GaAs Gunn diodes," Solid- State Electron., vol.49, no.2, pp.245-250, 2005.
    • (2005) Solid- State Electron. , vol.49 , Issue.2 , pp. 245-250
    • Montanan, S.1    Forster, A.2    Lepsa, M.I.3    Luth, H.4
  • 10
    • 0017521217 scopus 로고
    • Edge acuity and resolution in positive type photoresist systems
    • P.D. Blais, "Edge acuity and resolution in positive type photoresist systems," Solid State Technology, vol.20, pp.76-85, 1977.
    • (1977) Solid State Technology , vol.20 , pp. 76-85
    • Blais, P.D.1
  • 12
    • 33947246513 scopus 로고    scopus 로고
    • Hot electron injector Gunn diode for advanced driver assistance systems
    • A. Forster, MI. Lepsa, D. Freundt, 3. Stock, and S. Montanan, "Hot electron injector Gunn diode for advanced driver assistance systems," Appi. Phys., vol.A87, pp.545-558, 2007.
    • (2007) Appi. Phys. , vol.A87 , pp. 545-558
    • Forster, A.1    Lepsa, M.I.2    Freundt, D.3    Stock, J.4    Montanan, S.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.