High frequency investigation of graded gap injectors for GaAs Gunn diodes

Solid-State Electronics

Volumn 49, Issue 2, 2005, Pages 245-250

  Montanari, Simone ^a   Förster, Arno ^b   Lepsa, Mihail Ion ^a,c   Lüth, Hans ^a  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

^b AACHEN UNIVERSITY OF APPLIED SCIENCES   (Germany)

^c NATIONAL INSTITUTE OF MATERIALS PHYSICS   (Romania)

Author keywords

AlGaAs barrier; GaAs; Graded gap injector; Gunn diode; Heterostructure; Intervalley transfer; Microwave amplifier; Microwave oscillator

Indexed keywords

COMPUTER SIMULATION; FREQUENCIES; GUNN DIODES; HETEROJUNCTIONS; MICROWAVE AMPLIFIERS; MICROWAVE OSCILLATORS; MONTE CARLO METHODS; OPTIMIZATION;

ALGAAS BARRIER; GRADED GAP INJECTOR; INTERVALLEY TRANSFER; S-PARAMETER MEASUREMENTS;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 9544243709     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2004.08.014     Document Type: Article

References (13)

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