High-Performance, Graded AlGaAs Injector, GaAs Gunn Diodes at 94 GHz

IEEE Electron Device Letters

Volumn 10, Issue 7, 1989, Pages 288-290

  Couch, N R ^a   Beton, P H ^b   Kelly, M J ^c   Kerr, T M ^c   Lee, M E ^d   Rees, P K ^e   Spooner, H ^f  

^a SRI INTERNATIONAL   (United States)

^b UNIVERSITY OF NOTTINGHAM   (United Kingdom)

^c GEC Hirst Research Centre ^*  (United States)

^d MARTLESHAM HEATH   (United Kingdom)

^e Epitaxial Products International Ltd ^*  (United States)

^f Marconi Electronic Devices Ltd ^*  (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE;

GUNN DIODES; POWER SEMICONDUCTOR DIODES;

SEMICONDUCTOR DIODES, GUNN;

EID: 0024700057     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.29655     Document Type: Article

References (12)

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2. N. R. Couch and H. Spooner, to be submitted to GEC J. Res.
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