Preparations of porous AlN particles from an aluminum-magnesium alloy melt solution

Materials Letters

Volumn 63, Issue 26, 2009, Pages 2205-2207

  Yan, Guojun ^a   Chen, Guangde ^b   Jiang, Bailing ^a   Wu, Yelong ^b  

^a XI'AN UNIVERSITY OF TECHNOLOGY   (China)

^b XI'AN JIAOTONG UNIVERSITY   (China)

Author keywords

Electronic materials; Nanomaterials; Semiconductors

Indexed keywords

ALN; ALUMINUM-MAGNESIUM; ALUMINUM-MAGNESIUM ALLOY; BRUNAUER-EMMETT-TELLER SURFACE AREAS; ELECTRONIC MATERIALS; NANOMATERIALS; PORE FORMATION; SELECTED AREA ELECTRON DIFFRACTION; SEM; SEMICONDUCTORS; TEM; WALL THICKNESS;

ADSORPTION; ALUMINA; ALUMINUM; ALUMINUM ALLOYS; ATMOSPHERIC TEMPERATURE; DIFFRACTION; MAGNESIUM; MAGNESIUM ALLOYS; NANOSTRUCTURED MATERIALS; SCANNING ELECTRON MICROSCOPY; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

ALUMINUM NITRIDE;

EID: 69249216382     PISSN: 0167577X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.matlet.2009.07.033     Document Type: Article

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