AFM and TEM study of hydrogenated sputtered Si/Ge multilayers

Superlattices and Microstructures

Volumn 45, Issue 4-5, 2009, Pages 475-481

  Frigeri, C ^a   Nasi, L ^a   Serenyi M ^b   Csik, A ^c   Erdelyi Z ^d   Beke, D L ^d  

^a IMEM CNR   (Italy)

^b RESEARCH INSTITUTE FOR TECHNICAL PHYSICS AND MATERIALS SCIENCE   (Hungary)

^c INSTITUTE OF NUCLEAR RESEARCH ATOMKI   (Hungary)

^d UNIVERSITY OF DEBRECEN   (Hungary)

Author keywords

AFM; Amorphous Si Ge; Annealing; Hydrogen; TEM

Indexed keywords

AMORPHOUS SILICON; ANNEALING; ATOMIC FORCE MICROSCOPY; CRYSTAL ATOMIC STRUCTURE; GERMANIUM; HYDROGEN; HYDROGENATION; SILICON; STABILITY; TRANSMISSION ELECTRON MICROSCOPY;

AFM; AMORPHOUS SI/GE; ANNEALING TEMPERATURES; ATOMIC-FORCE MICROSCOPIES; BULK DEGRADATIONS; ENERGY FILTERED TEM; GAS PRESSURES; HYDROGEN CONTENTS; INTER DIFFUSIONS; SI/GE MULTILAYERS; STRUCTURAL STABILITIES; TEM;

MULTILAYERS;

EID: 62949137784     PISSN: 07496036     EISSN: 10963677     Source Type: Journal    
DOI: 10.1016/j.spmi.2008.10.023     Document Type: Article

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