Correlation between a threshold failure time and void nucleation for describing the bimodal electromigration behavior of copper interconnects

Applied Physics Letters

Volumn 95, Issue 7, 2009, Pages

  Filippi, R G ^a   Wang, P C ^a   Brendler, A ^a   Lloyd, J R ^b  

^a IBM   (United States)

^b STATE UNIVERSITY OF NEW YORK   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACCURATE MODELING; COPPER INTERCONNECTS; COPPER METALLIZATION; ELECTROMIGRATION BEHAVIOR; ELECTROMIGRATION TESTING; FAILURE TIME; INTERCONNECT SYSTEMS; LOG-NORMAL; LOW-K DIELECTRIC MATERIALS; MEDIAN TIME TO FAILURES; ON CURRENTS; THREE-PARAMETER LOGNORMAL DISTRIBUTION; VOID GROWTH; VOID NUCLEATION;

DIELECTRIC MATERIALS; ELECTROMIGRATION; NUCLEATION; OPTICAL INTERCONNECTS; REGRESSION ANALYSIS;

FAILURE ANALYSIS;

EID: 69249165850     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3200233     Document Type: Article

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