Minimum void size and 3-parameter lognormal distribution for em failures in Cu interconnects

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2006, Pages 115-122

  Li, Baozhen ^a   Christiansen, Cathryn ^a   Gill, Jason ^a   Filippi, Ronald ^a   Sullivan, Timothy ^a   Yashchin, Emmanuel ^b  

^a IBM   (United States)

^b IBM RESEARCH   (United States)

Author keywords

Cu interconnects; Electromigration; Lognormal; Redundancy; Reliability; Voids

Indexed keywords

3-PARAMETER LOGNORMAL DISTRIBUTION; BROAD FAILURE TIME DISTRIBUTIONS;

COPPER; ELECTROMIGRATION; ELECTRON TRANSPORT PROPERTIES; PARAMETER ESTIMATION; REDUNDANCY; RELIABILITY THEORY;

ELECTRIC POWER SYSTEM INTERCONNECTION;

EID: 33748103303     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RELPHY.2006.251201     Document Type: Conference Paper

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