Electrochemical properties of metallurgical-grade silicon in hydrochloric acid

Electrochimica Acta

Volumn 54, Issue 26, 2009, Pages 6548-6553

  Kareh, K ^a   Ghahremaninezhad, A ^a   Asselin, E ^a  

^a UNIVERSITY OF BRITISH COLUMBIA   (Canada)

Author keywords

Dissolution; EIS; Mott Schottky; Semiconductor; Silicon

Indexed keywords

CONSTANT PHASE ELEMENT; EIS; EIS TEST; IMPEDANCE METHOD; IMPURITIES IN; INTERFACIAL IMPEDANCE; METALLURGICAL-GRADE SILICON; MOTT-SCHOTTKY; MOTT-SCHOTTKY PLOTS; NATIVE OXIDES; P TYPE SEMICONDUCTOR; PASSIVE FILMS; PASSIVE LAYER; PASSIVE OXIDES; POTENTIODYNAMICS; POTENTIOSTATICS; SEMICONDUCTOR; SPACE CHARGE REGIONS;

ACIDS; ALUMINA; CALCIUM; DISSOLUTION; ELECTROCHEMICAL CORROSION; ELECTROCHEMICAL PROPERTIES; GRAIN BOUNDARIES; HYDROCHLORIC ACID; METALLURGY; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING SILICON;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 69249100114     PISSN: 00134686     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.electacta.2009.06.039     Document Type: Article

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