Influence of the initial electrochemical potential on the growth mechanism and properties of anodic oxides on (100) Si

Journal of the Electrochemical Society

Volumn 143, Issue 9, 1996, Pages 2931-2938

  Bardwell, J A ^a,b   Allegretto, E M ^a   Phillips, J ^a,b   Buchanan, M ^a   Draper, N ^a  

^a NATIONAL RESEARCH COUNCIL CANADA   (Canada)

^b ELECTROCHEMICAL SOCIETY

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CHEMICAL VAPOR DEPOSITION; COMPOSITION; ELECTRIC IMPEDANCE MEASUREMENT; ELECTROLYTES; FILM GROWTH; OXIDES; SILICON WAFERS;

AC IMPEDANCE SPECTROSCOPY; ANODIC GROWTH MODE; ANODIC OXIDES; ELECTROCHEMICAL POTENTIAL; OPEN CIRCUIT POTENTIAL; OXIDE THICKNESS; POTENTIOSTAT;

ELECTROCHEMICAL ELECTRODES;

EID: 0030246540     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1837129     Document Type: Article

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