Dopant depth profiling by anodic sectioning using 0.1 M HCI electrolyte

Journal of the Electrochemical Society

Volumn 143, Issue 11, 1996, Pages

  Bardwell, J A ^a,b   Evans, R J ^b   Draper, N ^b   Rolfe, S J ^b   Naem, A ^c   Simard Normandin, M ^c  

^a ELECTROCHEMICAL SOCIETY

^b NATIONAL RESEARCH COUNCIL CANADA   (Canada)

^c NORTEL NETWORKS   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

ANODIC OXIDATION; ELECTROCHEMISTRY; ELECTROLYTES; HYDROCHLORIC ACID; SEMICONDUCTING SILICON;

ANODIC SECTIONING; DOPANT DEPTH PROFILING; ULTRASHALLOW IMPLANTS; VOLTAGE OXIDATION;

SEMICONDUCTOR DOPING;

EID: 0030289552     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1837225     Document Type: Article

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