Dielectric response of variable thickness Ba0.6Sr 0.4TiO3 films for property-specific device applications

Integrated Ferroelectrics

Volumn 100, Issue 1, 2008, Pages 36-47

  Weiss, C V ^a   Cole, M W ^b   Alpay, S P ^a   Ngo, E ^b   Toonen, R C ^b   Hirsch, S G ^b   Demaree, J D ^b   Hubbard, C ^b  

^a UNIVERSITY OF CONNECTICUT   (United States)

^b U S ARMY RESEARCH LABORATORY   (United States)

Author keywords

BST; Dielectric constant; Leakage current; Loss; Thickness; Tunability

Indexed keywords

BARIUM STRONTIUM TITANATE THIN FILMS; BST; DEVICE APPLICATION; DIELECTRIC CONSTANT; DIELECTRIC CONSTANTS; DIELECTRIC RESPONSE; FILM MORPHOLOGY; INSULATING PROPERTIES; LOW LOSS; LOW-LEAKAGE CURRENT; METALORGANIC SOLUTION DEPOSITIONS; RUTHERFORD BACK-SCATTERING; TIO; TUNABILITIES; VARIABLE THICKNESS;

ATOMIC FORCE MICROSCOPY; BARIUM; BARIUM STRONTIUM TITANATE; BARIUM TITANATE; PERMITTIVITY; STRONTIUM; STRONTIUM TITANATES;

SCANNING ELECTRON MICROSCOPY;

EID: 68949185069     PISSN: 10584587     EISSN: 16078489     Source Type: Journal    
DOI: 10.1080/10584580802540280     Document Type: Conference Paper

References (28)

1. A. Podpirka, M.W. Cole, and S. Ramanathan, Appl. Phys. Lett. 92, 212906 (2008).
2. H. T. Langhammer, T. Muller, K. H. Felgner, and H. P. Abicht, Mater. Lett. 42, 21-24 (2000).
3. M. W. Cole, C. Hubbard, E. Ngo, M. Ervin, and M. Wood, J. Appl. Phys. 92, 475 (2002).
4. Z. G. Ban and S. P. Alpay, J. Appl. Phys. 93, 504-511 (2003).
5. J. H. Park, E. J. Peterson, Q. X. Jia, J. Lee, X. Zeng, S. Si, and X. X. Xi, Appl. Phys. Lett. 78, 533-535 (2001).
6. T. R. Taylor, P. J. Hansen, B. Acikel, N. Pervez, R. A. York, S. K. Streiffer, and J. S. Speck, Appl. Phys. Lett. 80, 1978-1980 (2002).
7. T. M. Shaw, Z. Suo, M. Huang, E. Liniger, R. B. Laibowitz, and J. D. Baniecki, Appl. Phys. Lett. 75, 2129-2131 (1999).
8. W. Chang, C. M. Gilmore, W. J. Kim, J. M. Pond, S. W. Kirchoefer, S. B. Qadri, D. B. Chrisey, and J. S. Horwitz, J. Appl. Phys. 87, 3044-3049 (2000).
9. H. Li, Roytburd, A. L, Alpay, S. P, Tran, T. D, L. Salamanca-Riba, and R. Ramesh, Appl. Phys. Lett. 78b 2354-2356 (2001).
10. M.W. Cole, E. Ngo, S. Hirsch, M. B. Okatan, and S. P. Alpay, Appl. Phys. Lett. 92, 072906 (2008).
11. M. W. Cole, P. C. Joshi, and M. H. Ervin, J. Appl. Phys. 89, 6336-6340 (2001).
12. Y. A. Jeon, W. C. Shin, T. S. Seo, and S. G. Yoon, J. Mater. Res. 17, 2831-2836 (2002).
13. A. Vorobiev, P. Rundqvist, and S. Gevorgian, Mater. Sci. Eng. B 118, 214-218 (2005).
14. A. K. Tagantsev, V. O. Sherman, K. F. Astafiev, J. Venhatesh, and N. Setter, J. Electroceram. 11, 5-66 (2003).
15. J. G. Zhang and X. M. Wen, IEEE Trans. on Comp., Hybrids, Manuf. Technol. 9, 53-58 (1986).
16. A. Sharma, Z. G. Ban, S. P. Alpay, and J. V. Mantese, Appl. Phys. Lett. 85, 985-987 (2004).
17. J. Bellotti, E. K. Akdogan, A. Safari, W. Chang, and S. Kirchoefer, Integr. Ferroelectr. 49, 113-122 (2002).
18. M.W. Cole,W. D. Nothwang, C. Hubbard, E. Ngo, and M. Ervin, J. Appl. Phys. 93, 9218-9225 (2003).
19. S. G. Kim, S. B. Mah, N. W. Jang, D. S. Paik, and C. Y. Park, Mater. Lett. 43, 254-258 (2000).
20. M. W. Cole and P. C. Joshi, J. Appl. Phys. 86, 871-880 (1999).
21. B. Acikel, Ph.D. Thesis, University of California, Santa Barbara, 2002.
22. S. Regnery, Y. Ding, P. Ehrhart, F. Fitsilis, C. L. Jia, K. Szot, R. Waser, F. Schienle, M. Schumacher, and T. McEntee, in Mater. Res. Soc. Symp., Boston, MA, 2002.
23. A. Lookman, R. M. Bowman, J. M. Gregga, J. Kut, S. Rios, M. Dawber, A. Ruediger, and J. F. Scott, J. Appl. Phys. 96, 555-562 (2004).
24. H. W. Wang, Tamkang J. Sci. Eng. 5, 113-116 (2002).
25. B. S. Kim, S. H. Oh, S. Y. Son, K. W. Park, and D. K. Choi, J. Korean Phys. Soc. 41, 227-231 (2002).
26. D. S. Kil, J. B. Park, D. S. Yoon, C. R. Song, H. J. Cho, Y. Kim, Y. S. Yu, J. S. Roh, and H. K. Yoon, Jpn. J. Appl. Phys. 40, 3260-3265 (2001).
27. C. S. Hwang, S. O. Park, H. J. Cho, C. S. Kang, H. K. Kang, S. I. Lee, and M. Y. Lee, Appl. Phys. Lett. 67, 2819-2821 (1995).
28. S. I. Jang and H. M. Jang, Ceram. International 26, 421-425 (2000).