Current versus temperature-induced switching in a single-molecule tunnel junction: 1,5 cyclooctadiene on si(001)

Nano Letters

Volumn 9, Issue 8, 2009, Pages 2996-3000

  Nacci, Christophe ^a,b   Foälsch, Stefan ^a,b   Zenichowski, Karl ^a,b   Dokić, Jadranka ^a,b   Klamroth, Tillmann ^a,b   Saalfrank, Peter ^a,b  

^a PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

^b UNIVERSITY OF POTSDAM   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CROSSOVER BEHAVIOR; HIGHER TEMPERATURES; INELASTIC ELECTRON TUNNELING; LOW-TEMPERATURE SCANNING TUNNELING MICROSCOPY; QUANTUM CHEMICAL; QUANTUM DYNAMICAL CALCULATIONS; SI(0 0 1); SI(001) SURFACES; SINGLE-MOLECULE; TEMPERATURE-INDUCED; THERMALLY ACTIVATED;

CHEMISORPTION; ELECTRON TUNNELING; SCANNING TUNNELING MICROSCOPY; TUNNEL JUNCTIONS; WIND TUNNELS;

SWITCHING;

EID: 68949171917     PISSN: 15306984     EISSN: None     Source Type: Journal    
DOI: 10.1021/nl901419g     Document Type: Article

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