Phonon populations and electrical power dissipation in carbon nanotube transistors

Nature Nanotechnology

Volumn 4, Issue 5, 2009, Pages 320-324

  Steiner, Mathias ^a   Freitag, Marcus ^a   Perebeinos, Vasili ^a   Tsang, James C ^a   Small, Joshua P ^a   Kinoshita, Megumi ^a   Yuan, Dongning ^b   Liu, Jie ^b   Avouris, Phaedon ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

^b DUKE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACOUSTIC WAVE SCATTERING; CARBON NANOTUBES; ELECTROMAGNETIC WAVE EMISSION; GRAPHENE; SUBSTRATES; YARN;

ACOUSTIC-PHONON SCATTERING; CARBON NANOTUBE TRANSISTORS; EFFECTIVE TEMPERATURE; ELECTRICAL GENERATION; INTERMEDIATE FREQUENCIES; INTERMEDIATE FREQUENCY MODES; NANOSCALE ELECTRONIC DEVICES; NEGATIVE DIFFERENTIAL CONDUCTANCE;

PHONONS;

CARBON NANOTUBE; NANOTUBE;

ACOUSTICS; ARTICLE; CONDUCTANCE; ELECTRICITY; ELECTRON TRANSPORT; MATHEMATICAL ANALYSIS; OSCILLATOR; PHONON; PRIORITY JOURNAL; RAMAN SPECTROMETRY; SEMICONDUCTOR; CHEMISTRY; ENERGY TRANSFER; EQUIPMENT; EQUIPMENT DESIGN; INSTRUMENTATION; MATERIALS TESTING; NANOTECHNOLOGY; PARTICLE SIZE; ULTRASTRUCTURE;

ENERGY TRANSFER; EQUIPMENT DESIGN; EQUIPMENT FAILURE ANALYSIS; MATERIALS TESTING; NANOTECHNOLOGY; NANOTUBES, CARBON; PARTICLE SIZE; TRANSISTORS;

EID: 67049159767     PISSN: 17483387     EISSN: 17483395     Source Type: Journal    
DOI: 10.1038/nnano.2009.22     Document Type: Article

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