SCOPUS 정보 검색 플랫폼

Journal of Electronic Materials

Volumn 38, Issue 8, 2009, Pages 1548-1553

Growth of thick epitaxial CdTe films by close space sublimation

(8) Jiang, Q a Brinkman, A W a Cantwell, B J b Mullins, J T b Dierre, Fabrice b Basu, A b Veeramani, P c Sellin, P c

a DURHAM UNIVERSITY (United Kingdom)

b Durham Scientific Crystals Ltd (United States)

c UNIVERSITY OF SURREY (United Kingdom)

Author keywords

CdTe; Detector; Epitaxy; Thick film

Indexed keywords

CDTE; CDTE/CDS; CLOSE SPACE SUBLIMATIONS; DEFECT ENERGY; EPITAXIAL METHOD; EPITAXY; FILM RESISTIVITY; FULL-WIDTH AT HALF MAXIMUMS; GAAS; GAAS SUBSTRATES; GE SUBSTRATES; GE(100); HIGH QUALITY; HIGH-ENERGY RADIATION DETECTORS; MICROSCOPIC GROWTH; POLYCRYSTALLINE; SINGLE-CRYSTAL FILMS; SINGLE-CRYSTALLINE; THICK EPITAXIAL; TRANSMISSION IMAGING; X RAY ROCKING CURVE;

CADMIUM ALLOYS; CADMIUM COMPOUNDS; CRYSTAL GROWTH; EPITAXIAL FILMS; EPITAXIAL GROWTH; GALLIUM ALLOYS; GERMANIUM; RADIATION DAMAGE; RADIATION DETECTORS; SEMICONDUCTING GALLIUM; SINGLE CRYSTALS; SOLAR ENERGY; SUBLIMATION; SUBSTRATES; THICK FILMS;

FILM PREPARATION;

EID: 68749095774 PISSN: 03615235 EISSN: None Source Type: Journal
DOI: 10.1007/s11664-009-0808-1 Document Type: Conference Paper

Times cited : (14)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.