Hetero-epitaxial crystal growth of CdTe on GaAs substrates

Journal of Crystal Growth

Volumn 310, Issue 7-9, 2008, Pages 1652-1656

  Jiang, Q ^a   Mullins, J T ^b   Toman, J ^a   Hase, T P ^a   Cantwell, B J ^b   Lloyd, G ^c   Basu, A ^b   Brinkman, A W ^a  

^a DURHAM UNIVERSITY   (United Kingdom)

^b Durham Scientific Crystals Ltd   (United States)

^c UNIVERSITY OF LEEDS   (United Kingdom)

Author keywords

A1. Crystal morphology; A3. Hot wall epitaxy; A3. Vapour phase epitaxy; B2. Semiconductor II VI materials

Indexed keywords

CRYSTAL STRUCTURE; PHYSICAL VAPOR DEPOSITION; X RAY DIFFRACTION;

CRYSTAL MORPHOLOGY; DISLOCATION FORMATION; VAPOUR PHASE EPITAXY;

CRYSTAL GROWTH;

EID: 41449110549     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2007.11.171     Document Type: Article

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