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Journal of Crystal Growth

Volumn 227-228, Issue , 2001, Pages 183-192

GaAs/Ge/GaAs sublattice reversal epitaxy and its application to nonlinear optical devices

(4) Koha, Shinji a Kondob, Takashi b Shirakia, Yasuhiro a Itoc, Ryoichi c

a UNIVERSITY OF TOKYO (Japan)

b UNIVERSITY OF TOKYO (Japan)

c MEIJI UNIVERSITY (Japan)

Author keywords

A3. Molecular beam epitaxy; B1. Gallium compounds; B2. Nonlinear optical materials; B2. Semiconducting gallium arsenides; B3. Nonlinear optical

Indexed keywords

CRYSTAL LATTICES; MOLECULAR BEAM EPITAXY; NONLINEAR OPTICS; OPTICAL MATERIALS; SECOND HARMONIC GENERATION; SEMICONDUCTING GERMANIUM; SEMICONDUCTOR GROWTH;

SUBLATTICE REVERSAL EPITAXY;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0035398136 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(01)00660-1 Document Type: Conference Paper

Times cited : (67)

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