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Volumn 310, Issue 7-9, 2008, Pages 1664-1668

Close-spaced sublimation growth of homo- and hetero-epitaxial CdTe thick films

Author keywords

A1. Crystal morphology; A3. Vapour phase epitaxy; B2. Semiconductor II VI materials

Indexed keywords

NUCLEATION; SEMICONDUCTING CADMIUM TELLURIDE; SEMICONDUCTING GALLIUM ARSENIDE; SUBLIMATION; SURFACE MORPHOLOGY; VAPOR PHASE EPITAXY;

EID: 41449088528     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2007.12.043     Document Type: Article
Times cited : (16)

References (17)
  • 17
    • 41449107577 scopus 로고    scopus 로고
    • Q. Jiang, J.T. Mullins, J. Toman, T.P. Hase, B.J. Cantwell, G.E. Lloyd, A. Basu, A.W. Brinkman, Hetero-epitaxial crystal growth of CdTe on GaAs substrates, in: The 15th International Conference on Crystal Growth, 12-17 August 2007, Salt Lake City, UT.
    • Q. Jiang, J.T. Mullins, J. Toman, T.P. Hase, B.J. Cantwell, G.E. Lloyd, A. Basu, A.W. Brinkman, Hetero-epitaxial crystal growth of CdTe on GaAs substrates, in: The 15th International Conference on Crystal Growth, 12-17 August 2007, Salt Lake City, UT.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.