Carbon-free SiOx films deposited from octamethylcyclotetrasiloxane (OMCTS) by an atmospheric pressure plasma jet (APPJ)

European Physical Journal D

Volumn 54, Issue 2, 2009, Pages 211-217

  Schafer J ^a   Foest, R ^a   Quade, A ^a   Ohl, A ^a   Meichsner, J ^b   Weltmann, K D ^a  

^a INP GREIFSWALD   (Germany)

^b UNIVERSITY OF GREIFSWALD   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ATMOSPHERIC PRESSURE; CARBON FILMS; DEPOSITION; OXIDE FILMS; OXYGEN; PLASMA JETS; SILICON OXIDES; SURFACE ANALYSIS;

ATMOSPHERIC PRESSURE PLASMA JETS; DEPOSITED FILMS; DEPOSITION PROCESS; DETECTION LIMITS; NORMAL PRESSURE; OCTAMETHYLCYCLOTETRASILOXANE; PARAMETRIC STUDY; SUBSTRATE TEMPERATURE;

SILICON COMPOUNDS;

EID: 68549111261     PISSN: 14346060     EISSN: 14346079     Source Type: Journal    
DOI: 10.1140/epjd/e2009-00048-2     Document Type: Article

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