Optimization of phase change memory with thin metal inserted layer on material properties

International Journal of Modern Physics B

Volumn 23, Issue 17, 2009, Pages 3625-3630

  Harnsoongnoen, Sanchai ^a   Sa Ngiamsak, Chiranut ^a   Siritaratiwat, Apirat ^a  

^a KHON KAEN UNIVERSITY   (Thailand)

Author keywords

Electrical resistivity; Finite element modeling; Low reset current; Phase change memory (PCM); Phase change memory with thin metal interlayer (PCMTMI); Thermal conductivity

Indexed keywords

EID: 68449085343     PISSN: 02179792     EISSN: None     Source Type: Journal    
DOI: 10.1142/S0217979209063080     Document Type: Conference Paper

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