Fundamentals of surfactant sputtering

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 267, Issue 16, 2009, Pages 2731-2734

  Hofsäss, Hans ^a   Zhang, Kun ^a  

^a UNIVERSITY OF GÖTTINGEN   (Germany)

Author keywords

Re sputter limit; Sputtering; Surfaces; Thin films

Indexed keywords

ANALYTICAL APPROACH; ATOM DEPOSITION; DYNAMIC EQUILIBRIA; ENHANCED SURFACE; FLUENCES; FOREIGN ATOMS; INCIDENCE ANGLES; INTER-DIFFUSION; ION IRRADIATION; MACROSCOPIC LENGTH; MONTE CARLO SIMULATION; NOVEL SURFACES; NOVEL TECHNIQUES; RE-SPUTTER LIMIT; SPUTTER EROSION; SPUTTER YIELDS; SPUTTERING YIELDS; STATE COVERAGE; SUBSTRATE SURFACE; SURFACTANT LAYERS; ULTRA-THIN FILM;

ATOMS; COMPUTER SIMULATION LANGUAGES; IONS; MONTE CARLO METHODS; SILICON; SPUTTERING; SURFACE ACTIVE AGENTS; SURFACE TENSION; THIN FILMS; XENON;

SUBSTRATES;

EID: 68349148065     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2009.05.028     Document Type: Article

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