Reliability of metamorphic HEMTs for power applications

Microelectronics Reliability

Volumn 42, Issue 9-11, 2002, Pages 1569-1573

  Dammann, M ^a   Benkhelifa, F ^a   Meng, M ^a   Jantz, W ^a  

^a FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

HETEROJUNCTION BIPOLAR TRANSISTORS; OHMIC CONTACTS;

ACCELERATED LIFETIME TESTS; CHANNEL TEMPERATURE; FABRICATION TECHNOLOGIES; HIGH TEMPERATURE STORAGE TEST; METAMORPHIC BUFFERS; METAMORPHIC HEMTS; POWER APPLICATIONS; PROCESS MODIFICATIONS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 68349141369     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(02)00192-0     Document Type: Conference Paper

References (8)

1. Smith P M, Nichols K, Kong W, MtPleasant L, Pritchard D, Lender R, Fisher J, Actis R, Dugas D, Meharry D, Swanson A W, Advances in InP HEMT technology for high frequency applications. 23th GaAs IC Symposium. 2001, pp. 7-10. (Pubitemid 33068143)
2. Benkhelifa F., Chertouk M, Dammann M, Massler H, Lösch R, Walther M, Weimann G. High performance metamorphic HEMT with 0.25 μm refractory metal gate on 4" GaAs substrate. GaAs Manufacturing Technology Conference, 2001, pp. 230-233.
3. Whelan C S, Marsh, P F, Hoke W E, Kazior T E. GaAs metamorphic HEMT: the ideal candidate for high performance, millimeter wave low noise and power applications. GaAs Manufacturing Technology Conference, 2000, pp. 237-240.
4. Benkhelifa F., Quay R, Losch R, Schauble K, Dammann M, Mikulla M, Weimann G. Potential of metamorphic HEMT with 0.25 (im refractory metal gate for power application in Ka-band. GaAs Manufacturing Technology Conference, 2002, pp. 268-271.
5. Meneghesso G, Massari G, Buttari D, Bortoletto A, Maretto M, Zanoni E. DC and pulsed measurements of on-state breakdown voltage in GaAs MESFETs and InP-based HEMTs. Microelectronics Reliability, 39 (1999), pp. 1759-1763. (Pubitemid 129592110)
6. Meneghesso G, Luise R, Buttari D, Chini A, Yokoyama H, Suemitsu T, Zanoni E. Parasitic effects and long term stability of InP-based HEMTs, Microelectronics Reliability, 40 (2000), pp. 1715-1720.
7. Wakita A S, Rohdin H, Su Y, Moll N, Nagy A, Robbins V M. Drain resistance degradation under high fields in AlInAs/GalnAs MODFETs. InP and Related Materials. 1997, pp. 376-379.
8. Menozzi R, Hot electron effects and degradation of GaAs and InP HEMTs for microwave and millimetre-wave applications, Semicond. Sci. Technol., 13 (1998) pp. 1053-1063. (Pubitemid 128575559)