P-type CuInSe2 thin films prepared by selenization of one-step electrodeposited precursors

Journal of Materials Research

Volumn 24, Issue 7, 2009, Pages 2293-2300

  Wan, Lei ^a   Cao, Yongsheng ^a   Wang, Deliang ^a  

^a UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC RATIO; CIS FILM; CRYSTALLINE QUALITY; FILM SURFACES; HIGH QUALITY; HIGHER TEMPERATURES; LOW MELTING TEMPERATURES; P-TYPE; PRECURSOR COMPOSITION; PRECURSOR LAYER; SELENIDES; SELENIZATION; SOLAR-CELL APPLICATIONS; SUBSTRATE TEMPERATURE; THERMAL PROCESS; TRANSPORT FLUXES;

CELL MEMBRANES; COPPER; COPPER COMPOUNDS; CORROSION; ELECTRODEPOSITION; FILM GROWTH; GRAIN GROWTH; MELTING POINT; MICROSTRUCTURE; SEMICONDUCTING SELENIUM COMPOUNDS;

FILM PREPARATION;

EID: 68149139740     PISSN: 08842914     EISSN: None     Source Type: Journal    
DOI: 10.1557/jmr.2009.0261     Document Type: Article

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