Epitaxial growth and characterization of CuInSe2 crystallographic polytypes

Journal of Applied Physics

Volumn 91, Issue 6, 2002, Pages 3598-3604

  Stanbery, B J ^a   Kincal, S ^b   Kim, S ^b   Chang, C H ^c   Ahrenkiel, S P ^d   Lippold, G ^e   Neumann, H ^f   Anderson, T J ^b   Crisalle, O D ^b  

^a HelioVolt Corporation   (United States)

^b University of Florida   (United States)

^c Oregon State University   (United States)

^d NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

^e LEIBNIZ INSTITUTE OF SURFACE ENGINEERING IOM   (Germany)

^f NONE   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ASSIGNMENT OF; CATION ORDERING; CHALCOPYRITE STRUCTURES; CRYSTALLOGRAPHIC STRUCTURE; GAAS; GROWTH PROCESS; METASTABLE PHASE; MIGRATION ENHANCED EPITAXY; NON EQUILIBRIUM; POLYTYPES; SPACE GROUPS; SURFACE KINETIC EFFECTS; TERNARY COMPOUNDS; TRANSMISSION ELECTRON DIFFRACTION;

COPPER COMPOUNDS; EPITAXIAL FILMS; EPITAXIAL GROWTH; METASTABLE PHASES; X RAY DIFFRACTION;

SINGLE CRYSTALS;

EID: 0037087462     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1446234     Document Type: Article

References (40)

1. J. P. Benner and L. Kazmerski, IEEE Spectrum 36, 34 (1999).
2. A. Rockett et al., Thin Solid Films 237, 1 (1994).
3. T. Haalboom, T. Gödecke, F. Ernst, M. Rühle, R. Herbholz, H. W. Schock, C. Beilharz, and K. W. Benz, Inst. Phys. Conf. Ser. 152, 249 (1997).
4. C. H. Chang, A. Davydov, B. J. Stanbery, and T. J. Anderson, The Conference Record of the 25th IEEE Photovoltaic Specialists Conference (IEEE, Piscataway, 1996), p. 849.
5. S.-H. Wei, L. G. Ferreira, and A. Zunger, Phys. Rev. B 45, 2533 (1992).
6. D. S. Su, W. Neumann, R. Hunger, M. Giersig, M. C. Lux-Steiner, and H. J. Lewerenz, Inst. Phys. Conf. Ser. 152, 229 (1997).
7. D. S. Su, W. Neumann, R. Hunger, P. Schubert-Bischoff, M. Giersig, H. J. Lewerenz, R. Scheer, and E. Zeitler, Appl. Phys. Lett. 73, 785 (1998).
8. B. J. Stanbery, C. H. Chang, S. Kim, S. Kincal, G. Lippold, S. P. Ahrenkiel, L. Li, T. J. Anderson, and M. M. Al-Jassim, Mater. Res. Soc. Symp. Proc. 583, 195 (1999).
9. M. H. Bode, J. Appl. Phys. 76, 159 (1994).
10. T. Wada, N. Kohara, T. Negami, and M. Nishitani, J. Mater. Res. 12, 1456 (1997).
11. P. Fons, S. Niki, A. Yamanda, and H. Oyanagi, J. Appl. Phys. 84, 6926 (1998).
12. Y. Horikoshi, M. Kawashima, and H. Yamaguchi, Jpn. J. Appl. Phys., Part 2 25, L868 (1986).
13. M. A. Herman and H. Sitter, Molecular Beam Epitaxy: Fundamentals and Current Status (Springer, Berlin, 1989), Vol. 7.
14. S. Niki, Y. Makita, A. Yamada, A. Obara, S. Misawa, O. Igarashi, K. Aoki, and N. Kutsuwada, Jpn. J. Appl. Phys., Part 1 32-3, 161 (1993).
15. International Tables for Crystallography: Space-Group Symmetry edited by T. Hahn (Kluwer Academic, Dordrecht, 1996), Vol. A.
16. S.-H. Wei, S. B. Zhang, and A. Zunger, Phys. Rev. B 59, R2478 (1999).
17. D. Suri, K. Nagpal, and G. Chadha, J. Appl. Crystallogr. 22, 578 (1989).
18. B. J. Stanbery, S. Kincal, S. Kim, T. J. Anderson, O. D. Crisalle, S. P. Ahrenkiel, and G. Lippold, Conference Record of the 28th IEEE Photovoltaic Specialists Conference (IEEE, Piscataway, 2000), p. 440.
19. H. Tanino, T. Maeda, H. Fujikake, H. Nakanishi, S. Endo, and T. Irie, Phys. Rev. B 45, 13323 (1992).
20. H. Neumann, Sol. Cells 16, 399 (1986).
21. N. N. Syrbu, M. Bogdanash, V. E. Tezlevan, and I. Mushcutariu, Physica B 229, 199 (1997).
22. J. H. Ely, T. R. Ohno, T. E. Furtak, and A. J. Nelson, Thin Solid Films 371, 36 (2000).
23. V. Vorlicek, V. Zelezny, A. N. Tiwari, M. Krejci, and H. Zogg, J. Appl. Phys. 82, 5484 (1997).
24. H. Neumann, Helv. Phys. Acta 58, 337 (1985).
25. F. W. Ohrendorf and H. Haeuseler, Cryst. Res. Technol. 34, 351 (1999).
26. F. W. Ohrendorf and H. Haeuseler, Cryst. Res. Technol. 35, 569 (2000).
27. H. Neumann, Cryst. Res. Technol. 24, 325 (1989).
28. L. Artus and J. Pasqual, J. Phys.: Condens. Matter 4, 5835 (1992).
29. R. Bacewicz, W. Gebicki, and J. D. Filipowicz, J. Phys.: Condens. Matter 6, L777 (1994).
30. C. Rincon and F. J. Ramirez, J. Appl. Phys. 72, 4321 (1992).
31. H. Tanino, H. Fujikake, T. Maeda, and H. Nakanishi, J. Appl. Phys. 74, 2114 (1993).
32. M. V. Yukashev, G. Lippold, A. E. Hill, R. D. Pilkington, and R. D. Tomlinson, J. Mater. Sci.: Mater. Electron. 7, 155 (1996).
33. A. M. Mintairov, N. A. Sadchikov, T. Sauncy, M. Holtz, G. A. Seryogin, S. A. Nikishin, and H. Temkin, Phys. Rev. B 59, 15197 (1999).
34. W. Richter, Springer Tracts Mod. Phys. 78, 121 (1976).
35. N. Yamamoto, M. Susaki, and K. Wakita, J. Lumin. 87-89, 226 (2000).
36. N. Yamamoto, M. Susaki, W.-Z. Huang, and K. Wakita, Cryst. Res. Technol. 31, S369 (1996).
37. S.-H. Wei, S. B. Zhang, and A. Zunger, in Monographs in Condensed Matter Science: Physics and Control of Defects in Semiconductors, edited by H. Katayama-Yoshida (in press).
38. S.-H. Wei (private communication) (2001).
39. C. H. Chang, S. H. Wei, J. W. Johnson, R. N. Battacharya, B. J. Stanbery, T. J. Anderson, and R. Duran, Jpn. J. Appl. Phys., Suppl. 39-1, 411 (2000).
40. G. Lippold, M. V. Yakushev, R. D. Tomlinson, A. E. Hill, and W. Grill, Cryst. Res. Technol. 31, S381 (1996).