SCOPUS 정보 검색 플랫폼

Journal of the American Chemical Society

Volumn 130, Issue 52, 2008, Pages 17660-17661

Growth inhibition to enhance conformal coverage in thin film chemical vapor deposition

(5) Kumar, Navneet a Yanguas Gil, Angel a Daly, Scott R b Girolami, Gregory S b Abelson, John R a

a University of Illinois at Urbana Champaign (United States)

b UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BACK REACTION; CONFORMAL COVERAGE; CONFORMALITY; FILM CONFORMALITY; FORWARD REACTIONS; GROWTH INHIBITION; GROWTH INHIBITOR; INHIBITORY MECHANISM; LE CHATELIER'S PRINCIPLES; LOW TEMPERATURE CHEMICAL VAPOR DEPOSITION; REACTION PRODUCTS; REACTIVE SITE; SINGLE-SOURCE PRECURSOR; STICKING PROBABILITY;

CHEMICAL VAPOR DEPOSITION; DEPOSITION; MOLECULAR BEAM EPITAXY; THIN FILM DEVICES; THIN FILMS; VAPORS;

FILM GROWTH;

CONFORMATION; FILM; GROWTH INHIBITION; GROWTH RATE; SHORT SURVEY; TEMPERATURE; VAPOR PRESSURE;

EID: 67949117011 PISSN: 00027863 EISSN: None Source Type: Journal
DOI: 10.1021/ja807802r Document Type: Short Survey

Times cited : (41)

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