Photoluminescence studies of Mg-doped AlxGa1-xAs epitaxial layers grown by molecular beam epitaxy

Japanese Journal of Applied Physics

Volumn 48, Issue 4, 2009, Pages

  Kim, Min Su ^a   Kim, Do Yeob ^a   Park, Ho Jin ^a   Kim, Jong Su ^b   Kim, Jin Soo ^c   Lee, Dong Yul ^d   Son, Jeong Sik ^e   Leem, Jae Young ^a  

^a Inje University   (South Korea)

^b Gwangju Institute of Science and Technology (GIST)   (South Korea)

^c Chonbuk National University   (South Korea)

^d Samsung Electro Mechanics   (South Korea)

^e Kyungwoon University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANOMALOUS BEHAVIOR; BEAM EQUIVALENT PRESSURE; BLUE-SHIFTED; EMISSION PEAKS; GROWTH PARAMETERS; MG-DOPED; MOLE FRACTION; PEAK ENERGY; PL EMISSION; RED SHIFT; SUBSTRATE TEMPERATURE; TEMPERATURE DEPENDENT; VARIOUS SUBSTRATES;

ALUMINUM; CRYSTAL GROWTH; GALLIUM; MAGNESIUM; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; MOLECULAR DYNAMICS; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SECONDARY BATTERIES; SEMICONDUCTOR QUANTUM WIRES; SUBSTRATES;

EPITAXIAL LAYERS;

EID: 67849119507     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.48.041103     Document Type: Article

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