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Journal of Crystal Growth

Volumn 197, Issue 4, 1999, Pages 762-768

Characterization of beryllium doped Al0.33Ga0.67As layers grown by molecular beam epitaxy

(6) Zheng, H Q a Radhakrishnan, K a Wang, H a Zhang, P H a Yoon, S F a Ng, G I a

a NANYANG TECHNOLOGICAL UNIVERSITY (Singapore)

Author keywords

AlGaAs; Beryllium; Doping; Photoluminescence

Indexed keywords

BERYLLIUM; CARRIER CONCENTRATION; CARRIER MOBILITY; ELECTRIC PROPERTIES; FILM GROWTH; MOLECULAR BEAM EPITAXY; OPTICAL VARIABLES MEASUREMENT; PHOTOLUMINESCENCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SURFACE ROUGHNESS;

HALL CONCENTRATION; HALL MOBILITY; HILSUM EXPRESSION;

SEMICONDUCTING FILMS;

EID: 0033096967 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(98)01068-9 Document Type: Article

Times cited : (8)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.