Radiation damage characterization in implanted silica

Radiation Effects and Defects in Solids

Volumn 164, Issue 7-8, 2009, Pages 417-423

  Mazzoldi, P ^a   Mattei, G ^a   Mariazzi, S ^b   Brusa, R S ^b  

^a UNIVERSITY OF PADOVA   (Italy)

^b UNIVERSITY OF TRENTO   (Italy)

Author keywords

Damage characterization; Ion implantation; Positron annihilation spectroscopy; Radiation damage distribution

Indexed keywords

CONCENTRATION OF; DAMAGE CHARACTERIZATION; DOPPLER BROADENING; FLUENCES; IMPLANTATION ENERGIES; NANO-VOIDS; OXYGEN DEFECT; POSITRON ANNIHILATION LINE; PROJECTED RANGE; RADIATION DAMAGE DISTRIBUTION; RANGE STRAGGLING; SILICA GLASS;

ELECTRONS; GLASS; ION BOMBARDMENT; ION IMPLANTATION; MAGNESIUM PRINTING PLATES; OXYGEN; POSITRON ANNIHILATION; QUENCHING; RADIATION DAMAGE; SILICA;

POSITRON ANNIHILATION SPECTROSCOPY;

EID: 67651238207     PISSN: 10420150     EISSN: 10294953     Source Type: Journal    
DOI: 10.1080/10420150902949340     Document Type: Conference Paper

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