X-ray absorption near-edge structure of GaN with high Mn concentration grown on SiC

Journal of Physics Condensed Matter

Volumn 21, Issue 29, 2009, Pages

  Sancho Juan, O ^a   Cantarero, A ^a   Garro, N ^a   Cros, A ^a   Martinez Criado G ^b   Salome M ^b   Susini, J ^b   Olguin D ^c   Dhar, S ^d,e  

^a UNIVERSITY OF VALENCIA   (Spain)

^b EUROPEAN SYNCHROTRON RADIATION FACILITY   (France)

^c DEPARTAMENTO DE FÍSICA   (Mexico)

^d UNIVERSITY OF DUISBURG ESSEN   (Germany)

^e PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AB INITIO CALCULATIONS; ABSORPTION PEAKS; ABSORPTION REGION; ANTI-BONDING STATE; EPILAYERS GROWN; FLUORESCENCE MODE; FULL POTENTIAL LINEAR AUGMENTED PLANE WAVES; GAP REGIONS; IONIZATION STATE; LOW MISMATCH; MN CONCENTRATIONS; MN-DOPED GAN; NEAR EDGE STRUCTURE; SIC SUBSTRATES; TETRAHEDRAL COORDINATION; X-RAY ABSORPTION NEAR-EDGE STRUCTURE; XANES SPECTRA;

ABSORPTION; CRYSTAL GROWTH; ELECTRON MOBILITY; GALLIUM ALLOYS; GALLIUM NITRIDE; MANGANESE COMPOUNDS; MOLECULAR BEAMS; MOLECULAR DYNAMICS; SEMICONDUCTING GALLIUM; SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE; X RAY ABSORPTION; X RAY ANALYSIS;

MANGANESE;

EID: 67651159167     PISSN: 09538984     EISSN: 1361648X     Source Type: Journal    
DOI: 10.1088/0953-8984/21/29/295801     Document Type: Article

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