Study of AlGaN/GaN MOSHEMT device with Al2O3 insulating film

Wuli Xuebao/Acta Physica Sinica

Volumn 57, Issue 3, 2008, Pages 1886-1890

  Feng, Qian ^a,b   Hao, Yue ^a,b   Yue, Yuan Zheng ^a,b  

^a XIDIAN UNIVERSITY   (China)

^b BEIJING UNIVERSITY OF POSTS AND TELECOMMUNICATIONS   (China)

Author keywords

Al2O3; ALD; GaN; MOSHEMT

Indexed keywords

EID: 41949123699     PISSN: 10003290     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (9)