Intra-dot relaxation and dephasing rates from time-resolved photoluminescence from InAs quantum dot ensembles

Solid State Communications

Volumn 149, Issue 35-36, 2009, Pages 1485-1492

  Chernikov, Alexej ^a   Horst, Swantje ^a   Koch, Stephan W ^a   Chatterjee, Sangam ^a   Rühle, Wolfgang W ^a   Sweet, Julian ^b   Richards, Benjamin ^b   Hendrickson, Josh ^b   Khitrova, Galina ^b   Gibbs, Hyatt M ^b   Litvinov, Dimitri ^c   Gerthsen, Dagmar ^c   Wegener, Martin ^c  

^a PHILIPPS UNIVERSITY MARBURG   (Germany)

^b UNIVERSITY OF ARIZONA   (United States)

^c UNIVERSITY OF KARLSRUHE   (Germany)

Author keywords

B. III V semiconductors; C. Quantum dots (optical properties); D. Time resolved luminescence; E. High resolution transmission electron microscopy (HRTEM)

Indexed keywords

B. III-V SEMICONDUCTORS; C. QUANTUM DOTS (OPTICAL PROPERTIES); D. TIME RESOLVED LUMINESCENCE; DEPHASING RATES; E. HIGH-RESOLUTION TRANSMISSION ELECTRON MICROSCOPY (HRTEM); EXCITATION LEVELS; EXCITATION PULSE; GROUND STATE TRANSITION; INAS QUANTUM DOTS; INTRA-DOT RELAXATION; LOW TEMPERATURES; OPTICAL PHONON SIDEBANDS; RADIATIVE RATES; RATE-EQUATION ANALYSIS; SCATTERED LASER LIGHT; STATE TRANSITIONS; TIME-RESOLVED; TIME-RESOLVED PHOTOLUMINESCENCE;

CAMERAS; ELECTRON MICROSCOPES; GROUND STATE; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; INDIUM ARSENIDE; INTEGRATED OPTOELECTRONICS; LIGHT; LIGHT EMISSION; OPTICAL MICROSCOPY; OPTICAL PROPERTIES; OPTICAL WAVEGUIDES; PHOTOLUMINESCENCE; POLARIZATION; SECURITY OF DATA; SEMICONDUCTING INDIUM; SEMICONDUCTOR QUANTUM WELLS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 67650638502     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ssc.2009.04.041     Document Type: Article

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