Estimation of built-in dipole moment in InAs quantum dots

Solid State Communications

Volumn 134, Issue 6, 2005, Pages 391-395

  Park, Y M ^a,b   Park, Y J ^a   Song, J D ^a   Lee, J I ^a  

^a Korea Institute of Science and Technology   (South Korea)

^b UNIV GRENOBLE ALPES   (France)

Author keywords

A. Quantum dots; D. Dipole moment; D. Quantum confined Stark effect

Indexed keywords

CAPACITANCE; ELECTRIC FIELD EFFECTS; ELECTRIC POTENTIAL; PHOTOLUMINESCENCE; SCHOTTKY BARRIER DIODES; SEMICONDUCTING INDIUM COMPOUNDS;

DIPOLE MOMENT; ELECTRON-HOLE SEPARATION; QUANTUM-CONFINED STARK EFFECT; STARK SHIFT;

SEMICONDUCTOR QUANTUM DOTS;

EID: 15544375379     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ssc.2005.02.008     Document Type: Article

References (23)

1. P.W. Fry, I.E. Itskevich, D.J. Mowbray, M.S. Skolnick, J.J. Finley, J.A. Barker, E.P. O'Reilly, L.R. Wilson, I.A. Larkin, P.A. Maksym, M. Hopkinson, M. Al-Khafaji, J.P.R. David, A.G. Cullis, G. Hill, and J.C. Clark Phys. Rev. Lett. 84 2000 733
2. I. Shtrichman, C. Metzner, B.D. Gerardot, W.V. Schoenfeld, and P.M. Petroff Physica E 13 2002 119
3. P. Jin, C.M. Li, Z.Y. Zhang, F.Q. Liu, Y.H. Chen, X.L. Ye, B. Xu, and Z.G. Wang Appl. Phys. Lett. 85 2004 2791
4. A.I. Yakimov, A.V. Dvurechenskii, A.I. Nikiforov, V.V. Ulyanov, A.G. Milekhin, A.O. Govorov, S. Schulze, and D.R.T. Zahn Phys. Rev. B 67 2003 125318
5. S.A. Empedocles, and M.G. Bawendi Science 278 1997 2114
6. J. Seufert, M. Obert, M. Scheibner, N.A. Gippius, G. Bacher, A. Forchel, T. Passow, K. Leonardi, and D. Hommel Appl. Phys. Lett. 79 2001 1033
7. S. Raymond, J.P. Reynolds, J.L. Merz, S. Fafard, Y. Feng, and S. Charbonneau Phys. Rev. B 58 1998 13415
8. A. Barenco, D. Deutsch, A. Ekert, and R. Josza Phys. Rev. Lett. 74 1995 4083
9. G.P. Berman, and G.D. Doolen Superlattices Microstruct. 27 2000 89
10. T.M. Hsu, W.H. Chang, C.C. Huang, N.T. Yeh, and J.I. Chyi Appl. Phys. Lett. 78 2001 1760
11. F. Findeis, M. Baier, E. Beham, A. Zrenner, and G. Abstreiter Appl. Phys. Lett. 78 2001 2958
12. K. Chang, and J.B. Xia Solid State Commun. 104 1997 351
13. J.A. Barker, and E.P. O'Reilly Phys. Rev. B 61 2000 13840
14. W. Sheng, and J.P. Leburton Phys. Rev. B 63 2001 161301
15. R.J. Warburton, C. Schäflein, D. Haft, F. Bickel, A. Lorke, K. Karrai, J.M. Garcia, W. Schoenfeld, and P.M. Petroff Nature 405 2000 926
16. J.J. Finley, M. Sabathil, P. Vogl, G. Abstreiter, R. Oulton, A.I. Tartakovskii, D.J. Mowbray, M.S. Skolnick, S.L. Liew, A.G. Cullis, and M. Hopkinson Phys. Rev. B 70 2004 201308
17. I.A. Akimov, A. Hundt, T. Flissikowski, and F. Henneberger Appl. Phys. Lett. 81 2002 4730
18. B. Urbaszek, R.J. Warburton, K. Karrai, B.D. Gerardot, P.M. Petroff, and J.M. Garcia Phys. Rev. Lett. 90 2003 247403
19. P.N. Brunkov, A.A. Suvorova, N.A. Bert, A.R. Kovsh, A.E. Zhukov, A.Yu. Egorov, V.M. Ustinov, A.F. Tsatsul'nikov, N.N. Ledentsov, P.S. Kop'ev, S.G. Konnikov, L. Eaves, and P.S. Main Semiconductors 32 1998 1096
20. Y.M. Park, Y.J. Park, K.M. Kim, J.C. Shin, J.D. Song, J.I. Lee, and K.H. Yoo J. Appl. Phys. 95 2004 123
21. E.F. Schubert Doping in III-V Semiconductors 1993 Cambridge University New York
22. We performed PL measurement under low excitation power density to minimize the electric field screening and was able to confirm a linear field-to-bias relation in our experimental condition. However, there is no experimental evidence that the electric field for a given bias does not depend on laser illumination. Thus, we name the electric field by the 'nominal electric field' in Figs. 3 and 4.
23. W. Heller, U. Bockelmann, and G. Abstreiter Phys. Rev. B 57 1998 6270