Strong enhancement of near-band-edge photoluminescence from ZnO by assembling ZnO/SiOx heterostructures

Journal of Physics D: Applied Physics

Volumn 41, Issue 23, 2008, Pages

  Kim, Sung ^a   Oh Kim, Chang ^a   Taek Oh, Hyoung ^a   Choi, Suk Ho ^a  

^a Kyung Hee University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BANDBENDING; DOUBLE LAYERS; HETEROSTRUCTURES; ION BEAM SPUTTERING DEPOSITION; NEAR BAND EDGE; NEAR EDGE X RAY ABSORPTION FINE STRUCTURE; OXYGEN CONTENT; PEAK ENERGY; PL SPECTRA; RADIO FREQUENCY SPUTTERING; SI(1 0 0); SINGLE LAYER; STRONG ENHANCEMENT; ZNO;

CRYSTALS; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; LIGHT TRANSMISSION; OPTICAL PROPERTIES; OXYGEN; PHOTOLUMINESCENCE; SEMICONDUCTING ZINC COMPOUNDS; SILICON COMPOUNDS; SPUTTERING; ZINC OXIDE;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 67650554733     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/41/23/235403     Document Type: Article

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