Full-band and atomistic simulation of n- and p-doped double-gate MOSFETs for the 22nm technology node

International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Volumn , Issue , 2008, Pages 221-224

  Luisier, Mathieu ^a   Klimeck, Gerhard ^a  

^a Purdue University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ORIENTATION; PHOSPHORUS; SPIN ORBIT COUPLING; TRANSISTORS;

ATOMISTIC SIMULATIONS; BAND-STRUCTURE MODEL; DOUBLE GATE FIELD EFFECT TRANSISTORS; DOUBLE-GATE MOSFETS; PHYSICS-BASED SIMULATION; SURFACE ORIENTATION; TIGHT BINDING MODEL; TRANSISTOR STRUCTURE;

MOSFET DEVICES;

EID: 67650354754     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SISPAD.2008.4648226     Document Type: Conference Paper

References (12)

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