An analytical 2D current model of double - gate Schottky - Barrier MOSFETs

International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Volumn , Issue , 2008, Pages 133-136

  Yu, Ning Zhao ^a   Du, Gang ^a   Jin, Feng Kang ^a   Xiao, Yan Liu ^a   Han, Ruqi ^a  

^a PEKING UNIVERSITY   (China)

Author keywords

2D potential distribution; Schottky Barrier; Tunneling current

Indexed keywords

2D POTENTIAL DISTRIBUTION; CHANNEL DEPTH; CURRENT MODELS; DOUBLE-GATE; MOSFETS; POTENTIAL DISTRIBUTIONS; SCHOTTKY BARRIERS; SCHOTTKY-BARRIER; SIMULATION RESULT; TUNNELING CURRENT;

ELECTRON TUNNELING; MOSFET DEVICES; SEMICONDUCTOR DEVICES; TUNNELING (EXCAVATION); WIND TUNNELS;

SIMULATORS;

EID: 67650345421     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SISPAD.2008.4648255     Document Type: Conference Paper

References (10)

1. J. Kedzierski, P. Xuan, E.H. Andersonf, J. Bokor, Tsu-Jae King, Chenming Hu, "Complementary silicide source/drain thin-body MOSFETs for the 20 nm gate length regime," IEDM Tech. Dig. 2000, pp. 57-60.
2. C.-K. Huang, W.E. Zhang, C.H. Yang, "Two-Dimensional Numerical Simulation of Schottky Barrier MOSFET with Channel Length to 10 nm," IEEE T. Electron Dev., vol.45, pp. 842-848, April 1998.
3. B. Winstead, U. Ravaioli, "Simulation of Schottky Barrier MOSFET's with a Coupled Quantum Injection/Monte Carlo Technique," IEEE T. Electron Dev., vol.47, pp. 1241-1246, June 2000.
4. J.M. Larson, J.P. Snyder, "Overview and status of metal S/D Schottky-barrier MOSFET technology," IEEE T. Electron Dev., vol. 53, pp. 1048-1058, May 2006.
5. DESSIS, ISE TCAD Manuals, Integ. Syst. Engr. AG. Zurich, Switzerland.
6. R.A.Vega, "Comparison study of tunneling models for Schottky field effect transistors and the effect of Schottky barrier lowering," IEEE T. Electron Dev., vol. 53, pp. 1593-1600, July 2006.
7. Z.-H. Liu, C. Hu, J.-H. Huang, T.-Y. Chan,; M.-C. Jeng, P.K. Ko, Y.C. Cheng, "Threshold voltage model for deep-submicrometer MOSFETs," IEEE T. Electron Dev., vol. 40, pp. 86-95, January 1993.
8. A.T. Fromhold, Quantum Mechanics For Applied Physics And Engineering. New York, NY: Academic Press, 1981.
9. J. M. Andrews and M. P. Lepselter, "Reverse current-voltage characteristics of metal-silicide Schottky diodes," Solid-State Electron., vol. 13, pp. 1011-1023, 1970
10. J. Knoch, M. Zhang, S. Mantl, J. Appenzeller, "On the performance of single-gated ultrathin-body SOI Schottky-barrier MOSFETs," IEEE T. Electron Dev., vol. 53, pp. 1669- 1674, July 200