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Journal of Applied Physics

Volumn 105, Issue 12, 2009, Pages

Electron scattering due to dislocation wall strain field in GaN layers

(1) Krasavin, S a

a JOINT INSTITUTE FOR NUCLEAR RESEARCH (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

DEFORMATION POTENTIAL; DISLOCATION WALLS; EXPERIMENTAL DATA; GAN LAYERS; IONIZED IMPURITIES; LOW TEMPERATURES; MODEL PARAMETERS; RELAXATION TIME APPROXIMATION; STRAIN FIELDS;

ELECTRON ENERGY LOSS SPECTROSCOPY; GALLIUM ALLOYS; GALLIUM NITRIDE; GALVANOMAGNETIC EFFECTS; HALL MOBILITY; SCATTERING; SEMICONDUCTING GALLIUM;

SINGLE CRYSTALS;

EID: 67650260954 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3147744 Document Type: Conference Paper

Times cited : (6)

References (29)

1
- 0005985130
- 0021-8979,. 10.1063/1.371145
- S. J. Pearton, J. C. Zolper, R. J. Shul, and F. Ren, J. Appl. Phys. 0021-8979 86, 1 (1999). 10.1063/1.371145
- (1999) J. Appl. Phys. , vol.86 , pp. 1
- Pearton, S.J.¹ Zolper, J.C.² Shul, R.J.³ Ren, F.⁴

2
- 0003809788
- (INSPEC, IEE, London).
- J. Edgar, S. Strite, L. Akasaki, H. Amano, and C. Wetzel, Properties, Processing and Applications of Gallium Nitride and Related Semiconductors (INSPEC, IEE, London, 1999).
- (1999) Properties, Processing and Applications of Gallium Nitride and Related Semiconductors
- Edgar, J.¹ Strite, S.² Akasaki, L.³ Amano, H.⁴ Wetzel, C.⁵

3
- 1842655826
- 0003-6951,. 10.1063/1.114486
- D. Kapolnek, X. H. Wu, B. Heying, S. Keller, B. P. Keller, U. K. Mishra, S. P. DenBaars, and J. S. Speck, Appl. Phys. Lett. 0003-6951 67, 1541 (1995). 10.1063/1.114486
- (1995) Appl. Phys. Lett. , vol.67 , pp. 1541
- Kapolnek, D.¹ Wu, X.H.² Heying, B.³ Keller, S.⁴ Keller, B.P.⁵ Mishra, U.K.⁶ Denbaars, S.P.⁷ Speck, J.S.⁸

4
- 0029637531
- 0003-6951,. 10.1063/1.113252
- S. D. Lester, F. A. Ponce, M. G. Craford, and D. A. Steigerwald, Appl. Phys. Lett. 0003-6951 66, 1249 (1995). 10.1063/1.113252
- (1995) Appl. Phys. Lett. , vol.66 , pp. 1249
- Lester, S.D.¹ Ponce, F.A.² Craford, M.G.³ Steigerwald, D.A.⁴

5
- 0029755411
- 0003-6951,. 10.1063/1.116495
- B. Heying, X. H. Wu, S. Keller, Y. Li, D. Kapolnek, B. P. Keller, S. P. DenBaars, and J. S. Speck, Appl. Phys. Lett. 0003-6951 68, 643 (1996). 10.1063/1.116495
- (1996) Appl. Phys. Lett. , vol.68 , pp. 643
- Heying, B.¹ Wu, X.H.² Keller, S.³ Li, Y.⁴ Kapolnek, D.⁵ Keller, B.P.⁶ Denbaars, S.P.⁷ Speck, J.S.⁸

6
- 0343201921
- 0021-8979,. 10.1063/1.360997
- Z. Bougrioua, J. L. Farvacque, and D. Ferŕ, J. Appl. Phys. 0021-8979 79, 1536 (1996). 10.1063/1.360997
- (1996) J. Appl. Phys. , vol.79 , pp. 1536
- Bougrioua, Z.¹ Farvacque, J.L.² Ferŕ, D.³

7
- 0032048780
- 0021-8979,. 10.1063/1.366585
- N. G. Weimann, L. F. Eastman, D. Doppalapudi, H. M. Ng, and T. D. Moustakas, J. Appl. Phys. 0021-8979 83, 3656 (1998). 10.1063/1.366585
- (1998) J. Appl. Phys. , vol.83 , pp. 3656
- Weimann, N.G.¹ Eastman, L.F.² Doppalapudi, D.³ Ng, H.M.⁴ Moustakas, T.D.⁵

8
- 0000668635
- 0003-6951,. 10.1063/1.122012
- H. M. Ng, D. Doppalapudi, T. D. Moustakas, N. G. Weimann, and L. F. Eastman, Appl. Phys. Lett. 0003-6951 73, 821 (1998). 10.1063/1.122012
- (1998) Appl. Phys. Lett. , vol.73 , pp. 821
- Ng, H.M.¹ Doppalapudi, D.² Moustakas, T.D.³ Weimann, N.G.⁴ Eastman, L.F.⁵

9
- 0000926633
- 0031-9007,. 10.1103/PhysRevLett.82.1237
- D. C. Look and J. R. Sizelove, Phys. Rev. Lett. 0031-9007 82, 1237 (1999). 10.1103/PhysRevLett.82.1237
- (1999) Phys. Rev. Lett. , vol.82 , pp. 1237
- Look, D.C.¹ Sizelove, J.R.²

10
- 0043167782
- 0163-1829,. 10.1103/PhysRevB.67.235208
- M. N. Gurusinghe and T. G. Andersson, Phys. Rev. B 0163-1829 67, 235208 (2003). 10.1103/PhysRevB.67.235208
- (2003) Phys. Rev. B , vol.67 , pp. 235208
- Gurusinghe, M.N.¹ Andersson, T.G.²

11
- 0020156860
- 0021-8979,. 10.1063/1.331333
- C. M. Penchina, J. L. Farvacque, and R. Masut, J. Appl. Phys. 0021-8979 53, 4970 (1982). 10.1063/1.331333
- (1982) J. Appl. Phys. , vol.53 , pp. 4970
- Penchina, C.M.¹ Farvacque, J.L.² Masut, R.³

12
- 0001307951
- 0003-6951,. 10.1063/1.123149
- C. Shi, P. M. Asbeck, and E. T. Yu, Appl. Phys. Lett. 0003-6951 74, 573 (1999). 10.1063/1.123149
- (1999) Appl. Phys. Lett. , vol.74 , pp. 573
- Shi, C.¹ Asbeck, P.M.² Yu, E.T.³

13
- 36149012552
- 10.1103/PhysRev.80.72
- J. Bardeen and W. Shockley, Phys. Rev. 80, 72 (1950). 10.1103/PhysRev.80.72
- (1950) Phys. Rev. , vol.80 , pp. 72
- Bardeen, J.¹ Shockley, W.²

14
- 36149011140
- 10.1103/PhysRev.86.964
- D. L. Dexter and F. Seitz, Phys. Rev. 86, 964 (1952). 10.1103/PhysRev.86.964
- (1952) Phys. Rev. , vol.86 , pp. 964
- Dexter, D.L.¹ Seitz, F.²

15
- 0015662280
- 0022-4332.
- R. de Wit, J. Res. Natl. Bur. Stand., Sect. A 0022-4332 77, 607 (1973).
- (1973) J. Res. Natl. Bur. Stand., Sect. A , vol.77 , pp. 607
- De Wit, R.¹

16
- 38049103268
- 0034-6861,. 10.1103/RevModPhys.80.61
- M. Kleman and J. Friedel, Rev. Mod. Phys. 0034-6861 80, 61 (2008). 10.1103/RevModPhys.80.61
- (2008) Rev. Mod. Phys. , vol.80 , pp. 61
- Kleman, M.¹ Friedel, J.²

17
- 0034606150
- 0375-9601,. 10.1016/S0375-9601(00)00717-9
- S. E. Krasavin and V. A. Osipov, Phys. Lett. A 0375-9601 277, 245 (2000). 10.1016/S0375-9601(00)00717-9
- (2000) Phys. Lett. A , vol.277 , pp. 245
- Krasavin, S.E.¹ Osipov, V.A.²

18
- 84985574468
- 0031-8957,. 10.1002/pssb.19660160264
- B. Pödör, Phys. Status Solidi 0031-8957 16, K167 (1966). 10.1002/pssb.19660160264
- (1966) Phys. Status Solidi , vol.16 , pp. 167
- Pödör, B.¹

19
- 0346749990
- 0163-1829,. 10.1103/PhysRevB.23.5413
- J. R. Meyer and F. J. Bartoli, Phys. Rev. B 0163-1829 23, 5413 (1981). 10.1103/PhysRevB.23.5413
- (1981) Phys. Rev. B , vol.23 , pp. 5413
- Meyer, J.R.¹ Bartoli, F.J.²

20
- 5244278122
- 0361-5235,. 10.1007/BF02666636
- M. Shur, B. Gelmont, and M. Asif Khan, J. Electron. Mater. 0361-5235 25, 777 (1996). 10.1007/BF02666636
- (1996) J. Electron. Mater. , vol.25 , pp. 777
- Shur, M.¹ Gelmont, B.² Asif Khan, M.³

21
- 22244476386
- 0003-6951,. 10.1063/1.115687
- S. Keller, B. P. Keller, Y. -F. Wu, B. Heying, D. Kapolnek, J. S. Speck, U. K. Mishra, and S. P. DenBaars, Appl. Phys. Lett. 0003-6951 68, 1525 (1996). 10.1063/1.115687
- (1996) Appl. Phys. Lett. , vol.68 , pp. 1525
- Keller, S.¹ Keller, B.P.² Wu, Y.-F.³ Heying, B.⁴ Kapolnek, D.⁵ Speck, J.S.⁶ Mishra, U.K.⁷ Denbaars, S.P.⁸

22
- 0035920666
- 0003-6951,. 10.1063/1.1394954
- D. C. Look and J. R. Sizelove, Appl. Phys. Lett. 0003-6951 79, 1133 (2001). 10.1063/1.1394954
- (2001) Appl. Phys. Lett. , vol.79 , pp. 1133
- Look, D.C.¹ Sizelove, J.R.²

23
- 0035333216
- 0038-1101,. 10.1016/S0038-1101(01)00088-0
- D. Huang, F. Yun, M. A. Reshchikov, D. Wang, H. Morko̧, D. L. Rode, L. A. Farina,. Kurdak, K. T. Tsen, S. S. Park, and K. Y. Lee, Solid-State Electron. 0038-1101 45, 711 (2001). 10.1016/S0038-1101(01)00088-0
- (2001) Solid-State Electron. , vol.45 , pp. 711
- Huang, D.¹ Yun, F.² Reshchikov, M.A.³ Wang, D.⁴ Morko̧, H.⁵ Rode, D.L.⁶ Farina, L.A.⁷ Kurdak, .⁸ Tsen, K.T.⁹ Park, S.S.¹⁰ Lee, K.Y.¹¹

24
- 0003578057
- (Wiley, New York).
- V. F. Gantmakher and B. I. Levinson, Carrier Scattering in Metals and Semiconductors (Wiley, New York, 1987).
- (1987) Carrier Scattering in Metals and Semiconductors
- Gantmakher, V.F.¹ Levinson, B.I.²

25
- 0002450697
- 0039-6028,. 10.1016/0039-6028(72)90251-8
- J. C. M. Li, Surf. Sci. 0039-6028 31, 12 (1972). 10.1016/0039-6028(72) 90251-8
- (1972) Surf. Sci. , vol.31 , pp. 12
- Li, J.C.M.¹

26
- 0000650967
- 0163-1829,. 10.1103/PhysRevB.61.5587
- V. Potin, P. Ruterana, G. Nouet, R. C. Pond, and H. Morko̧, Phys. Rev. B 0163-1829 61, 5587 (2000). 10.1103/PhysRevB.61.5587
- (2000) Phys. Rev. B , vol.61 , pp. 5587
- Potin, V.¹ Ruterana, P.² Nouet, G.³ Pond, R.C.⁴ Morko̧, H.⁵

27
- 0035522077
- 0927-7056,. 10.1023/A:1015182005901
- A. B́ŕ and A. Serra, Interface Sci. 0927-7056 9, 149 (2001). 10.1023/A:1015182005901
- (2001) Interface Sci. , vol.9 , pp. 149
- B́ŕ, A.¹ Serra, A.²

28
- 0001375353
- 0003-6951,. 10.1063/1.117524
- C. Kim, I. K. Robinson, J. Myoung, K. Shim, M. -C. Yoo, and K. Kim, Appl. Phys. Lett. 0003-6951 69, 2358 (1996). 10.1063/1.117524
- (1996) Appl. Phys. Lett. , vol.69 , pp. 2358
- Kim, C.¹ Robinson, I.K.² Myoung, J.³ Shim, K.⁴ Yoo, M.-C.⁵ Kim, K.⁶

29
- 0003899129
- (Wiley, New York).
- D. C. Look, Electrical Characterization of GaAs Materials and Devices (Wiley, New York, 1989).
- (1989) Electrical Characterization of GaAs Materials and Devices
- Look, D.C.¹

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