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Journal of Applied Physics

Volumn 105, Issue 12, 2009, Pages

Evolution of electroluminescence from multiple Si-implanted silicon nitride films with thermal annealing

(10) Cen, Z H a Chen, T P a Ding, L a Liu, Y a,b Wong, J I a Yang, M a Liu, Z a Goh, W P c Zhu, F R c Fung, S d

a NANYANG TECHNOLOGICAL UNIVERSITY (Singapore)

b UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA (China)

c INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING (Singapore)

d UNIVERSITY OF HONG KONG (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING TEMPERATURES; BAND TAIL; EMISSION BANDS; INJECTED ELECTRONS; INJECTION CURRENTS; NEAR INFRARED BAND; PEAK ENERGY; SI NANOCRYSTAL; SILICON NITRIDE FILM; THERMAL-ANNEALING; ULTRAVIOLET BANDS;

ANNEALING; ELECTROLUMINESCENCE; ELECTRON MOBILITY; LIGHT EMISSION; NANOCRYSTALS; SILICON; SILICON NITRIDE;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 67650239754 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3148248 Document Type: Conference Paper

Times cited : (18)

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