MeV-Si ion irradiation effects on the electrical properties of HfO2 thin films on Si

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 249, Issue 1-2 SPEC. ISS., 2006, Pages 414-416

  Yu, Xiangkun ^a,b   Shao, Lin ^a,b   Chen, Q Y ^a,b   Trombetta, L ^b   Wang, Chunyu ^c   Dharmaiahgari, Bhanu ^b   Wang, Xuemei ^b   Chen, Hui ^a,b   Ma, K B ^a,b   Liu, Jiarui ^a,b   Chu, Wei Kan ^a,b  

^a University of Houston   (United States)

^b UNIVERSITY OF HOUSTON   (United States)

^c University of Houston   (United States)

Author keywords

C V measurement; High energy ion implantation; Leakage current

Indexed keywords

CHEMICAL VAPOR DEPOSITION; ELECTRIC PROPERTIES; HAFNIUM COMPOUNDS; ION BOMBARDMENT; LEAKAGE CURRENTS; MOS CAPACITORS; RAPID THERMAL ANNEALING; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SUBSTRATES; THIN FILMS;

C-V MEASUREMENT; GATE ELECTRODES; HIGH ENERGY ION IMPLANTATION; VOLTAGE CHARACTERISTICS;

SILICON;

EID: 33745852788     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2006.04.041     Document Type: Article

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