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Volumn 105, Issue 12, 2009, Pages

Unexpected transition from single to double quantum well potential induced by intense laser fields in a semiconductor quantum well

Author keywords

[No Author keywords available]

Indexed keywords

ANALYTICAL EXPRESSIONS; BOUND-STATE ENERGIES; DINGER EQUATION; DIPOLE APPROXIMATION; DOUBLE QUANTUM WELL; DOUBLE-WELL POTENTIAL; ELECTRONIC SYSTEMS; ENERGY LEVEL; FLOQUET; HIGH FREQUENCY; INTENSE LASER FIELD; LASER FREQUENCY; NONPERTURBATIVE; NONRESONANT; POPULATION INVERSIONS; QUANTUM WELL; QUASI-STATIONARY STATE; RESONANT STATE; SEMICONDUCTOR NANOSTRUCTURES; SERIES EXPANSION; TRANSITION ENERGY; WELL WIDTH;

EID: 67650239508     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3153963     Document Type: Conference Paper
Times cited : (174)

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    • 0 (z -). Therefore, in this limit our expression recovers the rectangular QW profile found in the absence of external fields.
    • 0 (z -). Therefore, in this limit our expression recovers the rectangular QW profile found in the absence of external fields.
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    • Those interested in developing such experiments must be aware that the energy bandgain semiconductors is itself changed by ILFs, as explained in Ref.. The binding energy due to the electron-hole Coulombian attraction, though small, must also be taken into account.
    • Those interested in developing such experiments must be aware that the energy bandgap in semiconductors is itself changed by ILFs, as explained in Ref.. The binding energy due to the electron-hole Coulombian attraction, though small, must also be taken into account.
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    • The bound states at the separated wells can be easily controlled by a weak external bias.
    • The bound states at the separated wells can be easily controlled by a weak external bias.
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    • We plain to develoa systematic theoretical study of the response of the confined levels to a weak bias for electrons and holes confined in a semiconductor QW under ILFs in a future work.
    • We plain to develop a systematic theoretical study of the response of the confined levels to a weak bias for electrons and holes confined in a semiconductor QW under ILFs in a future work.
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    • r =10.90 is adopted.
    • r =10.90 is adopted.
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    • 0 (in aB) ≈7.31 r -5/4 I/ 2.


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