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25
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67650264037
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6 symmetry.
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6 symmetry.
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26
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-
67650254462
-
-
Newton's method works well in the search for the roots of these transcendental equations.
-
Newton's method works well in the search for the roots of these transcendental equations.
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27
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-
67650224701
-
-
The nonresonance of the laser field with the bandgarequires that < Ega/ (2π). In GaAs, this fraction evaluates to 367 THz.
-
The nonresonance of the laser field with the bandgap requires that < Egap / (2π). In GaAs, this fraction evaluates to 367 THz.
-
-
-
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29
-
-
67650257874
-
-
L). In GaAs, =3.3 and then 1447 THz for a 100 Å wide QW.
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L). In GaAs, =3.3 and then 1447 THz for a 100 Å wide QW.
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31
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3643096294
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0031-9007,. 10.1103/PhysRevLett.21.838
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W. C. Henneberger, Phys. Rev. Lett. 0031-9007 21, 838 (1968). 10.1103/PhysRevLett.21.838
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Henneberger, W.C.1
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1542470699
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2 dt)] produces only a gauge transformation which, in the dipole approximation, can be removed by a shift in the phase of ψ (z,t). See details in, 1050-2947,. 10.1103/PhysRevA.39.1139
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2 dt)] produces only a gauge transformation which, in the dipole approximation, can be removed by a shift in the phase of ψ (z,t). See details P. W. Milonni and J. R. Ackerhalt, Phys. Rev. A 1050-2947 39, 1139 (1989). 10.1103/PhysRevA.39.1139
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33
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67650245746
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The property ex(±i/αp) f (r) =f (r±α) for translation operators was taken into account here.
-
The property exp (±i/αp) f (r) =f (r±α) for translation operators was taken into account here.
-
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34
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45149085515
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0021-8979,. 10.1063/1.2937087
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F. M. S. Lima, O. A. C. Nunes, M. A. Amato, A. L. A. Fonseca, and E. F. da Silva, Jr., J. Appl. Phys. 0021-8979 103, 113112 (2008). 10.1063/1.2937087
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0031-9007,. 10.1103/PhysRevLett.52.613
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67650266892
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0 (z -). Therefore, in this limit our expression recovers the rectangular QW profile found in the absence of external fields.
-
0 (z -). Therefore, in this limit our expression recovers the rectangular QW profile found in the absence of external fields.
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38
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18744372810
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25144518035
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1610-1634,. 10.1002/pssc.200405143
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Da Silva Jr., E.F.8
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40
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67650245741
-
-
Those interested in developing such experiments must be aware that the energy bandgain semiconductors is itself changed by ILFs, as explained in Ref.. The binding energy due to the electron-hole Coulombian attraction, though small, must also be taken into account.
-
Those interested in developing such experiments must be aware that the energy bandgap in semiconductors is itself changed by ILFs, as explained in Ref.. The binding energy due to the electron-hole Coulombian attraction, though small, must also be taken into account.
-
-
-
-
41
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67650239806
-
-
The bound states at the separated wells can be easily controlled by a weak external bias.
-
The bound states at the separated wells can be easily controlled by a weak external bias.
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42
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0000837548
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0003-6951, () 10.1063/1.103503;, J. Appl. Phys. 0021-8979 73, 1542 (1993). 10.1063/1.353231
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43
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67650266886
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-
We plain to develoa systematic theoretical study of the response of the confined levels to a weak bias for electrons and holes confined in a semiconductor QW under ILFs in a future work.
-
We plain to develop a systematic theoretical study of the response of the confined levels to a weak bias for electrons and holes confined in a semiconductor QW under ILFs in a future work.
-
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45
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0037424149
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46
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67650215332
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-
r =10.90 is adopted.
-
r =10.90 is adopted.
-
-
-
-
47
-
-
67650218167
-
-
0 (in aB) ≈7.31 r -5/4 I/ 2
-
0 (in aB) ≈7.31 r -5/4 I/ 2.
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-
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