Laser-dressed binding energy of a hydrogen impurity in the GaAs/AlxGa1-xAs nanostructure in the presence of a static electric field

Superlattices and Microstructures

Volumn 23, Issue 5, 1998, Pages 1005-1014

  Fanyao, Qu ^a   Fonseca, A L A ^a   Nunes, O A C ^a  

^a UNIVERSITY OF BRASILIA   (Brazil)

Author keywords

Binding energy; High field effects; Impurities; Quantum wells

Indexed keywords

ELECTRIC FIELD EFFECTS; HYDROGEN; IMPURITIES; LASER BEAM EFFECTS; NANOSTRUCTURED MATERIALS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM WELLS;

INTENSE HIGH-FREQUENCY LASER;

BINDING ENERGY;

EID: 0031652226     PISSN: 07496036     EISSN: None     Source Type: Journal    
DOI: 10.1006/spmi.1998.0565     Document Type: Article

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