Density of impurity states of shallow donors in a quantum well under intense laser field

Superlattices and Microstructures

Volumn 44, Issue 2, 2008, Pages 173-182

  Niculescu, E C ^a   Burileanu, L M ^a   Radu, A ^a  

^a UNIVERSITY POLITEHNICA OF BUCHAREST   (Romania)

Author keywords

Density of impurity states; Laser radiation effects; Quantum well; Shallow donors

Indexed keywords

BINDING ENERGY; ELECTRIC FIELDS; IMPURITIES; LASERS; PHOTOACOUSTIC EFFECT; PULSED LASER DEPOSITION; QUANTUM WELL LASERS; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WIRES;

(001) PARAMETER; COULOMB POTENTIALS; DONOR BINDING ENERGY; DONOR IMPURITY STATES; EFFECTIVE MASS APPROXIMATION (EMA); ELSEVIER (CO); GAAS-ALGAAS; IMPURITY POSITION; IMPURITY STATES; INTENSE LASER FIELDS; LASER DRESSING; OPTICAL PHENOMENA; QUANTUM WELLS; SHALLOW DONORS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 47649122453     PISSN: 07496036     EISSN: 10963677     Source Type: Journal    
DOI: 10.1016/j.spmi.2008.03.005     Document Type: Article

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