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Volumn 79, Issue 23, 2009, Pages

Probing the interface of Fe3 O4 /GaAs thin films by hard x-ray photoelectron spectroscopy

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Indexed keywords


EID: 67649980022     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.79.233101     Document Type: Article
Times cited : (23)

References (29)
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    • 67649951597 scopus 로고    scopus 로고
    • dov = λsub cosθln (Dsub Iov Dov Isub +1) where λsub is the electron mean-free path, θ is the electron emission angle from the surface normal, Iov and Isub are the XPS peak intensities of overlayer (oxide) and substrate level, and Dov and Dsub are the atomic densities of the element in overlayer and substrate in mol/ cm3.
    • dov = λsub cosθln (Dsub Iov Dov Isub +1) where λsub is the electron mean-free path, θ is the electron emission angle from the surface normal, Iov and Isub are the XPS peak intensities of overlayer (oxide) and substrate level, and Dov and Dsub are the atomic densities of the element in overlayer and substrate in mol/ cm3.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.