Spintronics: Perspectives for the half-metallic oxides

Physica Status Solidi (A) Applied Research

Volumn 201, Issue 7, 2004, Pages 1392-1397

  Haghiri Gosnet, A M ^a   Arnal, T ^a   Soulimane, R ^a   Koubaa, M ^a   Renard, J P ^a  

^a UNIV PARIS SUD   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON TUNNELING; FERROMAGNETIC MATERIALS; MAGNETIC DEVICES; MAGNETORESISTANCE; POLARIZATION; RANDOM ACCESS STORAGE; STRONTIUM COMPOUNDS; CHARGE CARRIERS; ELECTRON MOBILITY; HOLE MOBILITY; MAGNETIC DISK STORAGE; TUNNEL JUNCTIONS;

HALF METALLIC OXIDES; MAGNETIC RANDOM ACCESS MEMORIES (MRAM); SPIN POLARIZATION; SPINTRONICS; DOMAIN WALLS;

LANTHANUM COMPOUNDS; MAGNETIC MATERIALS;

EID: 3042830704     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssa.200304403     Document Type: Conference Paper

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