Electronic properties of half metallic Fe 3O 4 films

Journal of Applied Physics

Volumn 97, Issue 9, 2005, Pages

  Jain, S ^a   Adeyeye, A O ^a   Boothroyd, C B ^b  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

BUFFER LAYER MATERIALS; ELECTRON BEAM DEPOSITION; INSULATOR-LIKE GAP STRUCTURES; MAGNETIC TUNNEL JUNCTIONS;

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC INSULATORS; ELECTRON BEAMS; ELECTRONIC PROPERTIES; FILM GROWTH; IRON COMPOUNDS; MICROSCOPIC EXAMINATION; THERMAL CONDUCTIVITY;

METALLIC FILMS;

EID: 18844407252     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1889247     Document Type: Article

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