Diffusionlike electric-field migration in the channel of organic field-effect transistors

Physical Review B - Condensed Matter and Materials Physics

Volumn 78, Issue 12, 2008, Pages

  Manaka, Takaaki ^a   Liu, Fei ^b   Weis, Martin ^a   Iwamoto, Mitsumasa ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b TSINGHUA UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 52949151201     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.78.121302     Document Type: Article

References (22)

1. G. M. Sessler, Electrets (Springer, Berlin, 1980).
2. H. Meier, Organic Semiconductors: Dark and Photoconductivity of Organic Solids (Chemie, Weinheim, 1974).
3. J. R. Haynes and W. Shockley, Phys. Rev. PHRVAO 0031-899X 10.1103/PhysRev.81.835 81, 835 (1951).
4. R. G. Kepler, Phys. Rev. PHRVAO 0031-899X 10.1103/PhysRev.119.1226 119, 1226 (1960).
5. P. Laurenceau, G. Dreyfus, and J. Lewiner, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.38.46 38, 46 (1977)
6. G. M. Sessler, J. E. West, and R. Gerhard, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.48.563 48, 563 (1982).
7. M. Iwamoto, Y. Majima, H. Naruse, T. Noguchi, and H. Fuwa, Nature (London) NATUAS 0028-0836 10.1038/353645a0 353, 645 (1991).
8. H. Scher and E. W. Montroll, Phys. Rev. B PLRBAQ 0556-2805 10.1103/PhysRevB.12.2455 12, 2455 (1975).
9. H. Bassler, Phys. Status Solidi B PSSBBD 0370-1972 10.1002/pssb. 2221750102 175, 15 (1993).
10. P. M. Borsemberger, E. H. Magin, M. van der Auweraer, and F. C. De Schryver, Phys. Status Solidi A PSSABA 0031-8965 10.1002/pssa.2211400102 140, 9 (1993).
11. T. Manaka, E. Lim, R. Tamura, and M. Iwamoto, Nat. Photonics ZZZZZZ 1749-4885 1, 581 (2007).
12. Y. S. Lee, J. H. Park, and J. S. Choi, Opt. Mater. (Amsterdam, Neth.) OMATET 0925-3467 10.1016/S0925-3467(02)00178-7 21, 433 (2002).
13. C. M. Snowden, Semiconductor Device Modelling (Peter Peregrinus, London, 1988).
14. P. S. Davids, I. H. Campbell, and D. L. Smith, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.366522 82, 6319 (1997).
15. N. Tessler and Y. Roichman, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1415374 79, 2987 (2001).
16. C. W. Gardiner, Handbook of Stochastic Methods: For Physics, Chemistry and the Natural Sciences (Springer, Berlin, 1983).
17. Because the carriers are mainly confined at the interface between the pentacene and insulator, and the electric-field profile Ex is almost invariable along the depth of the OFET, we only focused on the carrier density and electric field at the interface in this work.
18. If the source could not provide enough injection carriers to compensate the loss of the carriers under the edge of the source, the migration of Ex would be completely different from what we discussed here. We have observed this phenomenon in the TRM-SHG experiment.
19. The approximation of the electric field is crucial to the accuracy of Eq. 3. The simulation showed that it would be good at a relatively large time after a switching of the gate and drain voltages.
20. In our previous paper (Ref.), the carrier motion was analyzed in accordance with standard time-of-flight approach, where linear carrier motion with time was assumed.
21. G. Horowitz, R. Hajlaoui, and P. Delannoy, J. Phys. III JPAIEU 1155-4320 10.1051/jp3:1995132 5, 355 (1995).
22. A. R. Brown, C. P. Jarrett, D. M. de Leeuw, and M. Matters, Synth. Met. SYMEDZ 0379-6779 10.1016/S0379-6779(97)80881-8 88, 37 (1997).