Injected carrier distribution in a pentacene field effect transistor probed using optical second harmonic generation

Journal of Applied Physics

Volumn 104, Issue 7, 2008, Pages

  Yamada, Daisuke ^a   Manaka, Takaaki ^a   Lim, Eunju ^a   Tamura, Ryousuke ^a   Weis, Martin ^a   Iwamoto, Mitsumasa ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CIVIL AVIATION; ELECTROLYSIS; FIELD EFFECT TRANSISTORS; MESFET DEVICES; NONLINEAR OPTICS; SEMICONDUCTING ORGANIC COMPOUNDS; THEOREM PROVING;

BIASING CONDITIONS; CHANNEL LENGTHS; CHANNEL REGIONS; DRAIN ELECTRODES; INJECTED CARRIERS; OPTICAL SECOND HARMONIC GENERATIONS; ORGANIC FET; PENTACENE; PENTACENE FIELD EFFECT TRANSISTORS; SHG INTENSITIES; SHG SIGNALS;

HARMONIC GENERATION;

EID: 54049120629     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2988137     Document Type: Article

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