Large area nanosize array stamp for UV-based nanoimprint lithography fabricated by size reduction process

Microelectronic Engineering

Volumn 86, Issue 10, 2009, Pages 2015-2019

  Li, Xiaoli ^a,b   Wang, Qingkang ^a   Zhang, Jing ^b   Zhou, Weimin ^b   Liu, Yanbo ^b   Wan, Yongzhong ^b   Niu, Xiaoming ^b  

^a SHANGHAI JIAO TONG UNIVERSITY   (China)

^b Shanghai Nanotechnology Promotion Centre ^*  (China)

Author keywords

Electron beam lithography (EBL); Stamp; UV based nanoimprint lithography; Wet etching

Indexed keywords

AFM; ARRAY STRUCTURES; ELECTRON BEAM LITHOGRAPHY (EBL); LOW COSTS; NANO PATTERN; NANO-SIZE; PORE ARRAYS; POSSIBLE SOLUTIONS; QUARTZ SUBSTRATE; SEM; SEMICONDUCTOR FACTORIES; SIZE REDUCTION PROCESS; STAMP; TWO DIMENSIONAL (2D) PHOTONIC CRYSTALS; UV CURABLE; UV-BASED NANOIMPRINT LITHOGRAPHIES; UV-BASED NANOIMPRINT LITHOGRAPHY; WET ETCHING TECHNIQUES;

ASPECT RATIO; CURING; ELECTRON BEAM LITHOGRAPHY; ELECTRON BEAMS; ELECTRONS; INTEGRATED CIRCUITS; NANOTIPS; OXIDE MINERALS; PHOTONIC CRYSTALS; QUARTZ; SIZE DETERMINATION; WET ETCHING;

NANOIMPRINT LITHOGRAPHY;

EID: 67649958157     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2008.12.090     Document Type: Article

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