Thermoelectric properties and a device based on n-InSb and p-InAs

Applied Physics Letters

Volumn 90, Issue 5, 2007, Pages

  Kaiwa, Nakaba ^a   Yamazaki, Jun ^a   Matsumoto, Takayuki ^a   Saito, Masataka ^a   Yamaguchi, Shigeo ^a   Yamamoto, Atsushi ^b  

^a KANAGAWA UNIVERSITY   (Japan)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; ELECTRIC POTENTIAL; ELECTRIC PROPERTIES; IMPEDANCE MATCHING (ELECTRIC); SINGLE CRYSTALS; THERMAL EFFECTS; THERMODYNAMIC PROPERTIES;

INTERNAL RESISTANCE; LOAD RESISTANCE; OUTPUT VOLTAGE; THERMOELECTRIC PROPERTIES;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 33846973986     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2435605     Document Type: Article

References (9)

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