Separation of bulk and surface electron transport in metamorphic InAs layers using quantitative mobility spectrum analysis

Applied Physics Letters

Volumn 93, Issue 6, 2008, Pages

  Lin, Y ^a,b   Arehart, A R ^a   Carlin, A M ^a   Ringel, S A ^a  

^a Ohio State University   (United States)

^b SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMS; CONCENTRATION (PROCESS); CRYSTAL GROWTH; ELECTRIC CONDUCTIVITY; ELECTRIC CURRENTS; ELECTRON MOBILITY; ELECTRON TRANSITIONS; ELECTRON TRANSPORT PROPERTIES; ELECTRONS; EPITAXIAL GROWTH; GALVANOMAGNETIC EFFECTS; GYRATORS; HALL EFFECT; HALL MOBILITY; INDIUM ARSENIDE; INTERFEROMETRY; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; MOLECULAR DYNAMICS; SEMICONDUCTING INDIUM; SEMICONDUCTING SILICON COMPOUNDS; SEPARATION; SILICON; SINGLE CRYSTALS; SPECTRUM ANALYSIS; SPECTRUM ANALYZERS;

AVERAGE MOBILITY; DOPED SAMPLES; ELECTRON TRANSPORT; HALL-EFFECT MEASUREMENTS; HIGH CONDUCTIVITY; HIGH-MOBILITY; INP SUBSTRATES; LOW-DISLOCATION-DENSITY; PARALLEL CONDUCTION; QUANTITATIVE MOBILITY SPECTRUM ANALYSIS; SI DOPING; SINGLE ELECTRONS; STRAIN-RELAXED; SURFACE ACCUMULATION; SURFACE BAND BENDING; SURFACE CONDUCTIVITY; SURFACE ELECTRON ACCUMULATION; SURFACE ELECTRON TRANSPORT;

MAGNETIC FIELD EFFECTS;

EID: 49749150140     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2970045     Document Type: Article

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