In-Situ tem tensile test of 90nm-thick <110> SCS beam using MEMS chip

Proceedings of IEEE Sensors

Volumn , Issue , 2008, Pages 1116-1118

  Jin, Q H ^a   Li, T ^a   Wang, Y L ^a   Li, X X ^a   Zhou, P ^a   Xu, F F ^b  

^a SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY   (China)

^b INSTITUTE OF GEOLOGY AND GEOPHYSICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC SCALE; COMB-DRIVE ACTUATOR; FORCE SENSOR; IN-SITU TEM TENSILE TESTS; IN-SITU TENSILE TEST; IN-SITU TENSILE TESTING; MEMS CHIPS; QUANTITATIVE INFORMATION; SAMPLE DEFORMATION; SCS NANOBEAM; SI BULK MICROMACHINING; SIZE EFFECTS; TEM; TEM (TRANSMISSION ELECTRON MICROSCOPY); WAFER BONDING TECHNIQUES; YOUNG'S MODULUS;

CRYSTAL ATOMIC STRUCTURE; ELECTRON BEAMS; MATERIALS TESTING APPARATUS; MECHANICAL PROPERTIES; MEMS; MICROELECTROMECHANICAL DEVICES; NANOWIRES; SEMICONDUCTING SILICON COMPOUNDS; SENSORS; SILICON WAFERS; TENSILE STRENGTH; TRANSMISSION ELECTRON MICROSCOPY; WAFER BONDING;

TENSILE TESTING;

EID: 67649934138     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICSENS.2008.4716636     Document Type: Conference Paper

References (8)

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